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2SC5566

Description
Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size358KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SC5566 Overview

Bipolar Transistor

2SC5566 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)3.5 W
surface mountYES
Base Number Matches1
Ordering number : EN6307C
2SA2013/2SC5566
Bipolar Transistor
(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP
Applicaitons
http://onsemi.com
Relay drivers, lamp drivers, motor drivers, flash
Features
Large current capacity
Adoption of FBET and MBIT processes
High-speed switching
Low collector-to-emitter saturation voltage
Ultrasmall package facilitales miniaturization in end products
High allowable power dissipation
( )2SA2013
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Symbol
VCBO
VCES
VCEO
VEBO
Conditions
Ratings
(-50)100
(-50)100
(--)50
(--)6
Unit
V
V
V
V
Continued on next page.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
2SA2013-TD-E
2SC5566-TD-E
Packing Type: TD
2.5
1.0
4.0
TD
1
0.4
0.5
1.5
3.0
2
3
0.4
Marking
LOT No.
0.75
2SA2013
2SC5566
Electrical Connection
2
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
1
1
PCP
3
2SA2013
2SC5566
Semiconductor Components Industries, LLC, 2013
September, 2013
72512 TKIM/62405EA MSIM TB-00001405/52501 TS KT TA-3260 No.6307-1/8
FC
3
AT
LOT No.

2SC5566 Related Products

2SC5566 2SA2013
Description Bipolar Transistor Bipolar Transistor
Reach Compliance Code compli compli
Maximum collector current (IC) 4 A 4 A
Configuration Single Single
Minimum DC current gain (hFE) 200 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 3.5 W 3.5 W
surface mount YES YES
Base Number Matches 1 1
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