2SC5619
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC5619 is a super mini package resin sealed silicon NPN
epitaxial transistor.
It is designed for high frequency voltage application.
0.95
0.4
0.65
OUTLINE DRAWING
2.8
1.5
0.65
Unit：½½
①
②
③
2.8
1.90
1.1
FEATURE
・High gain bandwidth product. f
T=
4.5GHz
・High gain, low noise.
・Can operate at low voltage.
・Super mini package for easy mounting.
0.95
For TV tuners, High frequency voltage amplifier,
Cellular phone system
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-59
JEDEC：Similar to TO-236
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
20
12
3
50
150
＋150
-55½＋150
Unit
V
V
V
mA
mW
℃
℃
TYPE NAME
h
FE
ITEM
0½0.1
APPLICATION
0.8
MARKING
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
I
CBO
I
EBO
h
FE
f
T
Cob
|S
21
|
2
NF
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
Test conditions
V
CB
=10V, I
E
=0mA
V
EB
=1V, I
C
=0mA
V
CE
=5V , I
C
=20mA
V
CE
=5V, I
E
=20mA
V
CB
=5V, I
E
=0mA , f=1MHz
V
CE
=5V, I
C
=20mA , f=1GHz
V
CE
=5V, I
C
=5mA , f=1GHz
Limits
Min
-
-
50
-
-
7.5
-
Typ
-
-
-
4.5
1.0
9.0
1.5
Max
0.5
1.0
250
-
-
-
-
Unit
μA
μA
-
GHz
pF
dB
dB
ISAHAYA ELECTRONICS CORPORATION
0.13
G W
2SC5619
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
hFE - IC
1000
5
VCE=5V
4
fT - IC
100
Gain bandwidth product fT (GHz)
0.1
1
10
100
DC forward current gain hFE
3
2
10
1
1
Collector current IC (mA)
0
1
10
Collector current IC (mA)
100
Cob - Vcb
10
20
|S21e|
2
- IC
Collector output capacitance Cob (pF)
Insertion power gain |S21e|
2
( dB )
f=1MHz
IE=0
VCE=5V
15
f=500MHz
1
10
f=1GHz
5
0.1
0.1
1
10
100
Collector to Base voltage Vcb (V)
0
1
10
Collector current IC (mA)
100
|S21e|
2
- f
20
Insertion power gain |S21e|
2
( dB )
15
VCE=5V
IC=20mA
10
5
0
0.1
1
Frequency f (GHz)
10
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
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Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
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h
prohibited.
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Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
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Jun.2013
ARM Technology
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