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2SD1571

Description
Silicon NPN Power Transistors
File Size36KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD1571 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1571
DESCRIPTION
・With
TO-220Fa package
・Low
collector saturation voltage
・High
speed switching
・High
voltage:V
CBO
=800V(Min)
APPLICATIONS
・High
voltage switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
5
3
6
1.5
30
W
UNIT
V
V
V
A
A
A
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