INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1604
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 80V(Min)
·High
DC Current Gain
: h
FE
= 1000(Min) @I
C
= 4A
·Complement
to Type 2SB1104
APPLICATIONS
·Designed
for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
80
V
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
8
A
I
CP
Collector Current-Peak
12
A
P
C
Collector Power Dissipation
@ T
C
=25℃
40
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
sat
)-1
V
BE(
sat
)-2
I
CBO
I
CEO
h
FE
V
ECF
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Diode Forward Voltage
CONDITIONS
I
C
= 25mA; R
BE
=
∞
I
E
= 50mA; I
C
= 0
I
C
= 4A; I
B
= 8mA
B
2SD1604
MIN
80
7
TYP.
MAX
UNIT
V
V
1.5
3.0
2.0
3.5
100
10
1000
20000
3.0
V
V
V
V
μA
μA
I
C
= 8A; I
B
= 80mA
B
I
C
= 4A; I
B
= 8mA
B
I
C
= 8A; I
B
= 80mA
B
V
CB
= 60V; I
E
= 0
V
CE
= 50V; R
BE
=
∞
I
C
= 4A; V
CE
= 3V
I
F
= 8A
V
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 4A, I
B1
= -I
B2
= 8mA
0.5
5.0
1.0
μs
μs
μs
isc Website：www.iscsemi.cn
2
Test/Measurement
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