INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1656
DESCRIPTION
·High
Breakdown Voltage-
: V
CBO
= 1500V (Min)
·High
Switching Speed
·High
Reliability
APPLICATIONS
·Color
TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current- Continuous
6
A
I
CP
Collector Current-Pulse
16
A
P
C
Collector Power Dissipation
@ T
C
=25℃
60
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1656
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 100mA; R
BE
=
∞
800
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 5mA; I
E
= 0
1500
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 200mA; I
C
= 0
7
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1A
B
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1A
B
1.5
V
I
CBO
Collector Cutoff Current
V
CB
= 800V ; I
E
= 0
10
μA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
1.0
mA
h
FE
DC Current Gain
I
C
= 1A; V
CE
= 5V
8
t
f
Fall Time
I
C
= 5A, I
B1
= 1A; I
B2
= -2A
0.4
μs
isc Website：www.iscsemi.cn
2
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