INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1713
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 120V(Min)
·Good
Linearity of h
FE
·Wide
Area of Safe Operation
·Complement
to Type 2SB1158
APPLICATIONS
·Designed
for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
6
A
I
CP
Collector Current-Pulse
Collector Power Dissipation
@ T
C
=25℃
10
A
70
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
3
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1713
TYP.
MAX
UNIT
V
CE
(sat)
V
BE
(on)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.4A
B
2.0
V
Base -Emitter On Voltage
I
C
= 4A; V
CE
= 5V
1.8
V
μA
μA
Collector Cutoff Current
V
CB
= 120V; I
E
= 0
50
I
EBO
h
FE-1
Emitter Cutoff Current
V
EB
= 3V; I
C
= 0
I
C
= 20mA; V
CE
= 5V
20
50
DC Current Gain
h
FE-2
DC Current Gain
I
C
= 1A; V
CE
= 5V
60
200
h
FE-3
DC Current Gain
I
C
= 4A; V
CE
= 5V
20
C
OB
Collector Output Capacitance
I
E
= 0; V
CB
= 10V; f= 1MHz
85
pF
f
T
Current-Gain—Bandwidth Product
I
C
= 0.5A; V
CE
= 5V
20
MHz
h
FE-2
Classifications
Q
60-120
S
80-160
P
100-200
isc Website：www.iscsemi.cn
2
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