INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1791
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 100V (Min.)
·High
Switching Speed
APPLICATIONS
·Designed
for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
Base Current-Continunous
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
100
100
7
7
10
0.5
1.0
30
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
4.17
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1791
TYP.
MAX
UNIT
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 5mA
B
1.5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 3A; I
B
= 5mA
B
2.0
V
I
CBO
Collector Cutoff Current
V
CB
= 100V; I
E
= 0
0.1
mA
I
CEO
Collector Cutoff Current
V
CE
= 100V; I
B
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 7V; I
C
= 0
5
mA
h
FE
DC Current Gain
I
C
= 3A, V
CE
= 3V
1500
30000
f
T
Current-Gain—Bandwidth Product
I
C
= 0.7A; V
CE
= 10V
20
MHz
Switching Times; Resistive Load
t
on
t
s
t
f
Turn-On Time
Storage Time
Fall Time
I
C
= 3A; I
B1
= -I
B2
= 5mA
V
BB2
= 4V; R
L
= 10Ω
2
12
5
μs
μs
μs
isc Website:www.iscsemi.cn