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2SD1791

Description
isc Silicon NPN Darlington Power Transistor
File Size75KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SD1791 Overview

isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1791
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 100V (Min.)
·High
Switching Speed
APPLICATIONS
·Designed
for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
Base Current-Continunous
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
100
100
7
7
10
0.5
1.0
30
150
-55~150
UNIT
V
V
V
A
A
A
A
W
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
4.17
UNIT
℃/W
isc Website:www.iscsemi.cn
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