Ordering number : EN2539C
2SB1215/2SD1815
SANYO Semiconductors
DATA SHEET
2SB1215/2SD1815
Applications
•
PNP/NPN Epitaxial Planar Silicon Transistor
High-Current Switching
Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Features
•
•
•
•
Excllent linearity of hFE
Low collector-to-emitter saturation voltage
Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim
•
Fast switching time
High fT
Specifications
( ): 2SB1215
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
(--)120
(-
-)100
(--)6
(-
-)3
(-
-)6
Unit
V
V
V
A
A
Continued on next page.
Package Dimensions
unit : mm (typ.)
7518-003
6.5
5.0
4
2.3
1.5
0.5
Package Dimensions
unit : mm (typ.)
7003-003
2SB1215S-E
2SB1215S-H
2SB1215T-E
2SB1215T-H
2SD1815S-E
2SD1815S-H
2SD1815T-E
2SD1815T-H
6.5
5.0
4
2.3
1.5
0.5
0.8
1.6
1.2
7.5
0.5
1
0.6
2
0.8
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
2SB1215S-TL-E
2SB1215S-TL-H
2SB1215T-TL-E
2SB1215T-TL-H
2SD1815S-TL-E
2SD1815S-TL-H
2SD1815T-TL-E
2SD1815T-TL-H
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
5.5
7.0
5.5
7.0
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
B1215
RANK
LOT No.
Packing Type (TP-FA) : TL
D1815
Electrical Connection
2,4
2,4
1.2
3
3
RANK
LOT No.
TL
2SB1215
1
2SD1815
1
http://semicon.sanyo.com/en/network
50212 TKIM/N2503TN (KT)/92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No. 2539-1/10
2SB1215/2SD1815
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
1
20
150
--55 to +150
Unit
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)0.5A
VCE=(--)5V, IC=(--)2A
VCE=(--)10V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
IC=(--)1.5A, IB=(--)0.15A
VCE=(--)1.5A, IC=(--)0.15A
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
(-
-)120
(-
-)100
(--)6
100
(800)900
50
70*
40
(130)180
(40)25
(--200)150
(-
-)0.9
(--500)400
(-
-)1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
Ratings
min.
typ.
max.
(-
-)1
(-
-)1
400*
Unit
μA
μA
*
: The 2SB1215/2SD1815 are classified by 100mA hFE as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20 s
D.C. 1%
INPUT
IB1
OUTPUT
IB2
VR
50
+
100 F
VBE= --5V
+
470 F
VCC=50V
RB
IC=10IB1= --10IB2=1.5A
For PNP, the polarity is reversed.
Ordering Information
Device
2SB1215S-E
2SB1215S-H
2SB1215T-E
2SB1215T-H
2SD1815S-E
2SD1815S-H
2SD1815T-E
2SD1815T-H
2SB1215S-TL-E
2SB1215S-TL-H
2SB1215T-TL-E
2SB1215T-TL-H
2SD1815S-TL-E
2SD1815S-TL-H
2SD1815T-TL-E
2SD1815T-TL-H
Package
TP
TP
TP
TP
TP
TP
TP
TP
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
memo
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
No. 2539-2/10
2SB1215/2SD1815
--2.0
IC -- VCE
2SB1215
8
--1
m
A
--2
0m
A
--14mA
--12mA
2.0
IC -- VCE
2SD1815
A
A 16m
14m
18m
A
20mA
Collector Current, IC -- A
--8mA
--6mA
Collector Current, IC -- A
--1
6
m
A
--1.6
--10mA
1.6
12mA
10mA
--1.2
1.2
8mA
6mA
0.8
--0.8
--4mA
--2mA
4mA
2mA
--0.4
0.4
0
IB=0
0
--1
--2
--3
--4
--5
ITR09233
0
IB=0
0
1
2
3
4
5
ITR09234
Collector-to-Emitter Voltage, VCE -- V
--1.0
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
1.0
IC -- VCE
2SB1215
Collector Current, IC -- A
Collector Current, IC -- A
--0.8
mA
--4.0
mA
--3.5
A
--3.0m
A
--2.5m
A
5.0m
0.8
4.5m
A
2SD1815
4.0mA
3.5mA
3.0mA
--0.6
--2.0mA
--1.5mA
--1.0mA
0.6
2.5mA
0.4
--0.4
2.0mA
1.5mA
0.2
--0.2
1.0mA
0.5mA
--0.5mA
0
IB=0
0
--10
--20
--30
--40
--50
ITR09235
0
IB=0
0
10
20
30
40
50
ITR09236
Collector-to-Emitter Voltage, VCE -- V
--3.5
--3.0
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
3.5
3.0
IC -- VBE
2SB1215
VCE= --5V
Collector Current, IC -- A
2SD1815
VCE=5V
Collector Current, IC -- A
--2.5
--2.0
--1.5
--1.0
--0.5
0
2.5
2.0
1.5
1.0
0.5
0
Ta=7
5
°
C
25
°
C
--25
°
C
Ta=75
°
0
0.2
0.4
0.6
C
25
°
C
--25
°
C
0.8
1.0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
1.2
ITR09238
Base-to-Emitter Voltage, VBE -- V
1000
5
3
hFE -- IC
ITR09237
1000
7
5
3
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SB1215
VCE= --5V
DC Current Gain, hFE
Ta=75
°
C
25
°
C
2SD1815
VCE=5V
Ta=75
°
C
25
°C
--25
°
C
DC Current Gain, hFE
2
100
5
3
2
10
5
2
100
7
5
3
2
10
7
5
--25
°
C
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
Collector Current, IC -- A
5
--10
ITR09239
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
Collector Current, IC -- A
5
10
ITR09240
No. 2539-3/10
2SB1215/2SD1815
5
f T -- IC
2SB1215 / 2SD1815
VCE=10V
2SD1815
2SB1215
2
Cob -- VCB
2SB1215 / 2SD1815
f=1MHz
Gain-Bandwidth Product, f T -- MHz
3
2
Output Capacitance, Cob -- pF
100
7
5
100
7
5
3
2
3
2
2SB
121
5
2SD
181
5
10
7
10
For PNP, the minus sign is omitted.
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
For PNP, the minus sign is omitted.
5
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- A
5
ITR09241
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
7 100
2
ITR09242
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
2SB1215
IC / IB=10
3
2
1000
7
5
3
2
100
7
5
3
2
2SD1815
IC / IB=10
--1000
5
3
2
--100
25
°
C
5
3
2
--10
5
Ta=75°C
25
°
C
Ta=75°C
--25
°
C
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
--25°C
--0.01 2
3
5
2
3
5
2
3
5
10
--0.1
--1.0
Collector Current, IC -- A
--10
7
VBE(sat) -- IC
--10
ITR09243
10
7
Collector Current, IC -- A
VBE(sat) -- IC
10
ITR09244
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1215
IC / IB=10
2SD1815
IC / IB=10
5
3
2
--1.0
7
5
3
2
5
Ta= --25
°
C
75
°
C
25
°
C
1.0
7
5
3
Ta= --25
°
C
75
°
C
25
°
C
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
2
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
10
5
ITR09245
1.2
ASO
Collector Current, IC -- A
ITR09246
PC -- Ta
ICP
IC
2SB1215 / 2SD1815
Collector Dissipation, PC -- W
1.0
2SB1215 / 2SD1815
Collector Current, IC -- A
3
2
1.0
5
3
2
0.1
5
3
2
0.01
5
2
s
1m
0ms
1
DC
DC
0.8
op
m
100
op
era
Id
0.6
era
tio
n(
Ta
=
25
°
C
)
ea
l
Tc=25
°
C
Single pulse
For PNP, the minus sign is omitted.
3
5
1.0
2
3
5
10
2
3
5
Collector-to-Emitter Voltage, VCE -- V
tio
n(
=
Tc
°
C
25
he
s
at
di
ss
ip
0.4
ati
on
)
2
100
ITR09247
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
ITR09248
No. 2539-4/10
2SB1215/2SD1815
24
PC -- Tc
2SB1215 / 2SD1815
Collector Dissipation, PC -- W
20
16
12
8
4
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°
C
ITR09249
No. 2539-5/10
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