INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1826
DESCRIPTION
·High
DC Current Gain-
: h
FE
=
2000(Min)@ (V
CE
= 2V, I
C
= 3.5A)
·Large
Current Capability and Wide ASO.
·Complement
to Type 2SB1224
APPLICATIONS
·Designed
for use in control of motor drivers, printer
hammer drivers, relay drivers,and constant-voltage
regulators.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
70
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
7
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
a
=25℃
10
A
2
W
P
C
Collector Power Dissipation
@T
C
=25℃
T
J
Junction Temperature
25
150
℃
T
stg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 50mA; R
BE
=
∞
I
C
= 5mA; I
E
= 0
I
C
= 3.5A; I
B
= 7mA
I
C
= 3.5A; I
B
= 7mA
V
CB
= 40V; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 3.5A; V
CE
= 2V
I
C
= 3.5A; V
CE
= 5V
2000
20
MIN
60
70
TYP.
2SD1826
MAX
UNIT
V
V
1.5
2.0
100
3.0
V
V
μA
mA
MHz
Switching Times
Turn-on Time
Storage Time
Fall Time
I
C
= 3A, I
B1
= -I
B2
= 6mA,
V
CC
= 20V; R
L
= 6.7Ω
0.6
3.0
1.7
μs
μs
μs
t
on
t
stg
t
f
isc Website：www.iscsemi.cn
2
Microcontroller MCU
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