INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1833
DESCRIPTION
·Low
Collector Saturation Voltage
: V
CE(sat)
= 1.0V(Max.)@ I
C
= 4A
·High
Collector Power Dissipation
·Good
Linearity of h
FE
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
100
V
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
7
A
I
CM
Collector Current-Pulse
Collector Power Dissipation
@ T
a
=25℃
10
A
1.5
W
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
30
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
I
C
= 1mA; I
B
= 0
B
2SD1833
MIN
80
100
5
TYP.
MAX
UNIT
V
V
V
I
C
= 50μA; I
E
= 0
I
E
= 50μA; I
C
= 0
I
C
= 4A; I
B
= 0.4A
B
1.0
1.5
10
10
60
5
150
320
V
V
μA
μA
I
C
= 4A; I
B
= 0.4A
B
V
CB
= 100V; I
E
= 0
V
EB
= 4V; I
C
= 0
I
C
= 1A; V
CE
= 5V
I
E
= -0.5A; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
= 1.0MHz
MHz
pF
h
FE
Classifications
D
60-120
E
100-200
F
160-320
isc Website：www.iscsemi.cn
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