UNISONIC TECHNOLOGIES CO., LTD
2SD1857
POWER TRANSISTOR
FEATURES
* High breakdown voltage.(BV
CEO
=120V)
* Low collector output capacitance.(Typ.20pF at V
CB
=10V)
* High transition frequency.(f
T
=80MHz)
1
1
NPN EPITAXIAL SILICON TRANSISTOR
TO-92
TO-92NL
1
TO-251
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
2SD1857G-x-T92-K
2SD1857L-x- T92-R
2SD1857G-x- T92-R
2SD1857L-x-T9N-B
2SD1857G-x-T9N-B
2SD1857L-x-T9N-K
2SD1857G-x-T9N-K
2SD1857L-x-TM3-T
2SD1857G-x-TM3-T
Note: Pin Assignment: E: EMITTER C: COLLECTOR
Package
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-251
B: BASE
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tube
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Copyright © 2012 Unisonic Technologies Co., LTD
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QW-R201-057,F
2SD1857
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Current
Collector Current
TO-92NL
TO-92
TO-251
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
I
CP
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25℃, unless otherwise specified)
RATINGS
120
120
5
0.5
1
2
2
3
UNIT
V
V
V
W
A
A
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50µA
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=1mA
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50µA
Collector Cut-Off Current
I
CBO
V
CB
=100V
Emitter Cut-Off Current
I
EBO
V
EB
=4V
DC Current Transfer Ratio
h
FE
V
CE
=5V, I
C
=0.1A
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=/I
B
=1A/0.1A (Note)
Transition Frequency
f
T
V
CE
=5V, I
E
= -0.1A, f=30MHz.
Output Capacitance
C
OB
V
CB
=10V, I
E
=0A, f=1MHz (Note)
Note: Measured using pulse current.
MIN
120
120
5
TYP
MAX
UNIT
V
V
V
µA
µA
V
MHz
pF
82
80
20
1
1
390
0.4
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-057,F
2SD1857
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
1.0
100mA
1000
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
500
DC Current Fain: h
FE
T
A
=25°C
V
CE
=10V
Collector Current: I
C
(A)
0.8
0.6
0.4
200
100
50
20
10
5
5V
0.2
0
I
B
=0mA
0
1
2
3
4
5
Collector to Emitter Voltage: V
CE
(V)
T
A
=25°C
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
Collector Current,I
C
(A)
5 10
10
Collector Saturation Voltage:
V
CE(SAT)
(V)
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05
0.1 0.2
0.5
1
2
5 10
Collector Current,I
C
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-057,F
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