Power Transistor (160V , 1.5A)
2SD1918 / 2SD1857A
Features
1) High breakdown voltage.(BV
CEO=
160V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB=
10V)
3) High transition frequency.(f
T=
80MH
Z
)
4) Complements the 2SB1275.
Absolute
maximum ratings
(Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SD1857A
2SD1918
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
160
160
5
1.5
3
1
1
10
Tj
Tstg
150
−55 ∼+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W
W(Tc=25°C)
°C
0.9
4.4
Dimensions
(Unit : mm)
2SD1918
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
1.0
0.5
0.5
1.5
2.5
9.5
2.3
0.8Min.
5.1
6.5
C0.5
ROHM : CPT3
EIAJ : SC-63
∗1
∗2
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SD1857A
6.8
2.5
Junction temperature
Storage temperature
°C
0.65Max.
1.0
0.5
2.54 2.54
∗
1 Pw=200msec duty=1/2
∗
2
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger
.
(1) (2) (3)
1.05
0.45
Packaging
specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
*
Denotes h
FE
Taping specifications
14.5
2SD1918
CPT3
QR
−
TL
2500
2SD1857A
ATV
PQ
−
TV2
2500
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical
characteristics
(Ta = 25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
2SD1918
h
FE
2SD1857A
f
T
Cob
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
160
160
5
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
Max.
−
−
−
Unit
V
V
V
μA
μA
V
V
−
−
Conditions
I
C
=
50μA
I
C
=
1mA
I
E
=
50μA
V
CB
=
120V
V
EB
=
4V
I
C
/I
B
=
1A/0.1A
I
C
/I
B
=
1A/0.1A
V
CE
/I
C
=
5V/0.1A
V
CE
=
5V , I
E
= −
0.1A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
1
1
2
1.5
390
270
−
−
∗
∗
120
82
−
−
transfer ratio
Transition frequency
Output capacitance
80
20
MHz
pF
∗
Measured using pulse current.
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○
2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.09 - Rev.C
2SD1918 / 2SD1857A
Electrical
characteristic curves
1.0
Ta=25°C
Data Sheet
10
COLLECTOR CURRENT : I
C
(A)
A
10m
9mA
8mA
7mA
6mA
V
CE
=5V
1000
500
DC CURRENT GAIN : h
FE
Ta=25°C
COLLECTOR CURRENT : I
C
(A)
5
2
1
0.5
0.2
0.1
0.05
0.02
Ta=100°C
Ta=25°C
Ta=
−25°C
0.8
200
100
50
20
10
5
2
5V
V
CE
=10V
0.6
5mA
4mA
0.4
3mA
2mA
0.2
I
B
=1m
A
0
0
1
2
3
4
5
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1000
500
DC CURRENT GAIN : h
FE
V
CE
=5V
Ta=100°C
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
I
C
/I
B
=20
10
Ta=25°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
10
5
2
1
0.5
V
BE(sat)
0.2
0.1
−25°C
V
CE(sat)
0.02 0.05
0.1
0.2
0.5
1
2
25°C
Ta=
−25°C
100°C
I
C
/I
B
=10
200
100
50
20
10
5
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
25°C
−25°C
0.05
0.02
0.01
0.01
5
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
5
10
Fig.4 DC current gain vs. collector current (
ΙΙ
)
Fig.5 Collector-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage
1000
TRANSITION FREQUENCY : f
T
(MHz)
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
500
200
100
50
20
10
5
2
1
−1
−2
−5
−10
−20
−50
Ta=25°C
V
CE
=5V
1000
500
200
100
50
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
10
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
f=1MHz
I
E
=0A
5
2
1
500m
200m
100m
50m
20m
10m
5m
Ic
Max
(Pulse
∗
)
Pw
0
=1
m
Ta=25°C
∗Single
nonrepetitive
pulse
Pw
=1
00
m
s
∗
s
∗
−100 −200
−500 −1000
20
50
100
2m
1m
Recommended land
0.1 0.2 0.5
2
5
D
C
10 20
50 100 200
500 1000
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Gain bandwidth products vs. emitter current
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (2SD2211)
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c
○
2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.09 - Rev.C
Notice
Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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