INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD2081
DESCRIPTION
·High
DC Current Gain-
: h
FE
=
2000(Min)@ (V
CE
= 4V, I
C
= 5A)
·Large
Current Capability
·Complement
to Type 2SB1259
APPLICATIONS
·Driver
for solenoid, motor and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
10
A
I
CM
Collector Current-Pulse
15
A
I
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
1
A
P
C
30
W
T
J
150
℃
T
stg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD2081
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA; I
B
= 0
120
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 5mA
B
1.5
V
V
BE
(sat)
I
CBO
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 5mA
B
2.0
V
μA
Collector Cutoff Current
V
CB
= 120V; I
E
= 0
10
I
EBO
Emitter Cutoff Current
V
EB
= 6V; I
C
= 0
10
mA
h
FE
DC Current Gain
I
C
= 5A; V
CE
= 4V
2000
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V; f
test
= 1.0MHz
I
E
= -0.5A; V
CE
= 12V
95
pF
f
T
Current-Gain—Bandwidth Product
60
MHz
isc Website：www.iscsemi.cn
2
Embedded System
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