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2SD2129

Description
Silicon NPN Power Transistors
File Size34KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD2129 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2129
DESCRIPTION
・With
TO-220F package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・High
power switching applications
・Hammer
drive,pulse motor drive applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
7
3
5
0.5
2
W
UNIT
V
V
V
A
A
A
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