UNISONIC TECHNOLOGIES CO., LTD
2SD2136
POWER TRANSISTOR
DESCRIPTION
The UTC
2SD2136
is designed for power amplification.
NPN SILICON TRANSISTOR
FEATURES
* High forward current transfer ratio h
FE
which has satisfactory
linearity.
* Low collector to emitter saturation voltage V
CE(SAT)
.
* Allowing supply with the radial taping.
ORDERING INFORMATION
Ordering Number
Lead Free
2SD2136L-x-T60-K
2SD2136L-x-T6C-K
Halogen Free
2SD2136G-x-T60-K
2SD2136G-x-T6C-K
Package
TO-126
TO-126C
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Bulk
Bulk
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R204-011.C
2SD2136
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
3
A
Peak Collector Current
I
CP
5
A
Collector Dissipation
P
C
1.5
W
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°С, unless otherwise specified )
PARAMETER
Collector-Base Breakdown Voltage
Collect Cutoff Current
Collect Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
SYMBOL
BV
CEO
I
CEO
I
CES
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE
f
T
t
ON
t
S
t
F
TEST CONDITIONS
I
C
=30mA, I
B
=0
V
CE
=60V, I
B
=0
V
CE
=60 V, V
BE
=0
V
BE
=6 V, I
C
=0
V
CE
=4V ,I
C
=1A
V
CE
=4V ,I
C
=3A
I
C
=3A, I
B
=0.375A
V
CE
=4V ,I
C
=3A
V
CE
=15V, I
E
=0.1A, f =200MHz
I
C
= 1A, I
B1
=0.1A, I
B2
=0.1A
MIN
60
TYP
MAX UNIT
V
300
µA
200
µA
1
mA
250
1.2
1.8
220
0.5
2.5
0.4
V
V
MH
Z
µS
µS
µS
40
10
CLASSIFICATION OF h
FE1
RANK
RANGE
P
40-90
Q
70-150
R
120-250
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2SD2136
TYPICAL CHARACTERISTICS
5
4
3
I
C
-V
CE
T
C
=25°С
Collector Current, I
C
(A)
90mA
80mA
I
B
=100mA
70mA
60mA
50mA
40mA
30mA
20mA
1
10mA
0
0
2
4
6
8
10
Collector Emitter Voltage, V
CE
(V)
P
C
- T
A
Without Head Sink
Collector to Emitter Saturation
Voltage, V
CE(SAT)
(V)
12
8
7
6
5
4
3
2
1
0
0
NPN SILICON TRANSISTOR
I
C
- V
BE
V
CE
=4V
T
C
=25°С
Collector Current, I
C
(A)
T
C
=100°С
T
C
=-25°С
2
0.4
0.8
1.2
1.6 2.0
Base Emitter Voltage, V
BE
(V)
V
CE(SAT)
- I
C
2.4
2.0
Collector Power Dissipation, P
C
(W)
1.6
1.2
100
30
10
3
1
0.3
0.1
T
C
=100°С
T
C
=25°С
T
C
=-25°С
0.8
0.4
0
0
20
40
60
80 100 120 140 160
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
Ambient Temperature, T
A
(°С)
h
FE
- I
C
V
CE
=4V
Transtion Frequency, f
T
(MH
Z
)
Collector Current, I
C
(A)
f
T
- I
C
V
CB
=10V
T
C
=25°С
f=200MH
Z
10K
Forward Current Transfer Ratio, h
FE
3K
1K
0.3K
0.1K
300
250
200
150
100
50
T
C
=100°С
T
C
=25°С
T
C
=-25°С
30
10
3
1
0.01 0.03
0.1 0.3
1
3
Collector Current, I
C
(A)
10
0
-0.01 -0.03
-0.1 -0.3
-1
-3
-10
Collector Current, I
C
(A)
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2SD2136
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Thermal Resistance, R
TH
(t) (Ω/W)
Collector Current, I
C
(A)
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