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2SD2141_01

Description
Silicon NPN Triple Diffused Planar Transistor
File Size24KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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2SD2141_01 Overview

Silicon NPN Triple Diffused Planar Transistor

Equivalent circuit
C
Built-in Avalanche Diode
for Surge Absorbing
Darlington
2SD2141
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=330V
V
EB
=6V
I
C
=25mA
V
CE
=2V, I
C
=3A
I
C
=4A, I
B
=20mA
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
Ratings
10
max
20
max
330 to 430
1500
min
1.5
max
20
typ
95
typ
V
MHz
pF
13.0min
B
(1.5kΩ)(100Ω) E
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
380±50
380±50
6
6(
Pulse
10)
1
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Ignitor, Driver for Solenoid and Motor, and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
10
15
0m
V
CE
( sat ) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
=4 V )
120mA
A
90mA 60mA
A
20m
mA
18
C o l l e c t o r C u r r e n t I
C
( A)
C ol l e c t o r C ur r en t I
C
( A)
2mA
2
C o l l ec t or C u r r e n t I
C
( A)
4mA
5
em
ase
C (C
5˚C
(C
1A
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1.0
Ba s e- E m i t t or V o l t a ge V
BE
( V)
–30˚C
25˚
12
(Case
1
as
eT
3A
Tem
p)
5A
Temp
)
p)
I
B
=1 m A
I
C
= 7A
5
2. 0
2.4
Co l l ec t or - Emi t t e r V ol tag e V
C E
(V )
Ba s e C ur r en t I
B
( m A )
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= 2 V )
10000
5000
D C Cu r r e n t Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 2 V)
10000
5000
D C C ur r en t Ga i n h
FE
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
5
θ
j - a
– t Characteristics
Typ
12
1000
500
C
˚C
1000
500
25
1
0.5
5
–5
˚C
100
50
100
50
10
0.02
0.1
0. 5
1
5
10
20
0.02
0. 1
0.5
1 .0
5
10
0.1
1
10
Time t(ms)
1 00
1000
C ol l e ct or C ur ren t I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
40
20
10
5
Cu t-o ff Fr e q u e n c y f
T
( M H
Z
)
30
C oll ec to r Cu r r e n t I
C
(A )
Safe Operating Area
(Single Pulse)
40
Pc – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
30
D
C
1
0.5
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
Typ
10
0m
1ms
10
ms
s
W
ith
In
20
20
fin
ite
he
at
1 5 0 x 1 5 0x 2
10
1 00 x 1 0 0 x 2
50x50x2
2
0
Without Heatsink
0
25
50
75
si
nk
0.1
0.05
10
Without Heatsink
Natural Cooling
0
0.01
0 . 05
01
0. 5
1
5
0 .0 1
1
5
10
50
10 0
5 00
1 00
12 5
150
Em it t er C u rre nt I
E
( A)
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m bi en t T e m p e r a t ur e T a ( ˚ C )
148

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