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2SD2438_01

Description
Silicon NPN Triple Diffused Planar Transistor
File Size26KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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2SD2438_01 Overview

Silicon NPN Triple Diffused Planar Transistor

Equivalent circuit
C
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
160
150
5
8
1
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD2438
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=6A
I
C
=6A, I
B
=6mA
I
C
=6A, I
B
=6mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
80
typ
85
typ
V
V
MHz
pF
16.2
B
(7 0
)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1587)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
10
I
C
(A)
6
V
BB1
(V)
10
V
BB2
(V)
–2
I
B1
( mA)
6
I
B2
(mA)
–6
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
10.0typ
t
f
(
µ
s)
0.9typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
5m
2.
A
0m
A
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l ta g e V
C E (sa t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
8
( V
C E
=4 V )
10mA
8
2.
1.
8m
A
1 .3 m A
A
1.5m
C ol l e c t o r C ur r en t I
C
( A)
0.8 mA
2
4
I
C
= 8A
I
C
= 6A
1
I
C
= 4A
C ol l e c t o r C u r r e nt I
C
( A)
6
1.0 mA
6
4
p)
0.5mA
ase
2
2
C (C
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
25˚C
125˚
I
B
=0.3mA
–30˚C
(Case
(Case
Temp
)
Temp
)
Tem
2
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
Ba s e C ur r en t I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
(V
C E
=4 V )
40000
DC C u r r e nt Ga i n h
FE
D C C ur r en t Ga i n h
FE
50000
1 25 ˚ C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
4
Typ
10000
5000
10000
5000
2 5˚ C
–3 0 ˚ C
1
0.5
1000
1000
02
0. 5
1
Co l le ct o r Curre nt I
C
(A)
5
8
500
0.2
0.5
1
C o ll e ct o r Cu r r e n t I
C
( A)
5
8
0.2
1
5
10
5 0 1 00
Time t(ms)
50 0 1 00 0 20 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
120
20
Safe Operating Area
(Single Pulse)
80
10
m
Pc – Ta Derating
10
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
Typ
C olle c to r C u r r e n t I
C
( A )
80
5
DC
0m
s
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
10
60
60
1
0 .5
Without Heatsink
Natural Cooling
0 .1
40
40
20
20
0
–0.02
– 0. 1
–1
–8
0.05
3
5
10
50
10 0
200
3. 5
0
Without Heatsink
0
50
100
150
Em i t t er Cu rre nt I
E
(A )
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
152
3.0
2.5
s
W
ith
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fin
ite
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at
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