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2SD2524

Description
isc Silicon NPN Power Transistor
File Size82KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SD2524 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD2524
DESCRIPTION
·High
Breakdown Voltage-
:V
CBO
= 1700V (Min)
·High
Switching Speed
·Low
Saturation Voltage
·Built-in
Damper Diode
APPLICATIONS
·Designed
for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1700
V
V
CES
Collector-Emitter Voltage
1700
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current- Continuous
8
A
I
CM
Collector Current-Peak
20
A
I
BM
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
5
A
100
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
3
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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