Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PML package
・High
speed
・High
breakdown voltage
・Built-in
damper diode
APPLICATIONS
・Color
TV horizontal deflection output
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD2578
・
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
8
20
60
W
UNIT
V
V
V
A
A
1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD2578
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0
800
V
V
CEsat
Collector-emitter saturation voltage
I
C
=5 A;I
B
=1A
5
V
V
BEsat
Base-emitter saturation voltage
I
C
=5 A;I
B
=1A
1.5
V
I
CBO
Collector cut-off current
V
CB
=800V; I
E
=0
10
μA
I
CES
Collector cut-off current
V
CB
=1500V; R
BE
=0
1.0
mA
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
40
130
mA
h
FE-1
DC current gain
I
C
=5A ; V
CE
=5V
5
8
h
FE-2
DC current gain
I
C
=1A ; V
CE
=5V
I
C
=4A;R
L
=50Ω
I
B1
=0.8A;I
B2
=-1.6A;V
CC
=200V
15
30
t
f
Fall time
0.3
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2578
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2578
4
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