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2SD468

Description
SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size238KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric View All

2SD468 Overview

SMALL SIGNAL TRANSISTOR

2SD468 Parametric

Parameter NameAttribute value
Maximum collector current1 A
Number of terminals3
Processing package descriptionTO-92MOD, 3 PIN
stateTransferred
structureSingle
Minimum DC amplification factor85
jesd_30_codeO-PBCY-T3
Packaging MaterialsPLASTIC/EPOXY
packaging shapeROUND
Package SizeCYLINDRICAL
larity_channel_typeNPN
wer_dissipation_max__abs_0.9000 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SD468
Features
x
x
Low Frequency Power Amplifier.
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Complementary pair with 2SB562
NPN
Epitaxial
Silicon Transistor
TO-92L
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-Base Breakdown Voltage
(I
C
=10 Adc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=0.01mAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=20Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
Rating
20
25
5.0
1.0
0.9
-55 to +150
-55 to +150
Min
20
25
5.0
---
---
Typ
---
---
---
---
---
Max
---
---
---
1000
1000
Unit
V
V
V
A
W
O
C
O
C
Units
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Vdc
Vdc
Vdc
nAdc
nAdc
B
C
E
ON CHARACTERISTICS
DC Current gain
(I
C
=500mAdc, V
CE
=2.0Vdc)
V
BE(on)
Base-Emitter On Voltage
(V
CE
=2.0Vdc, I
C
=500mAdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=0.8Adc, I
B
=80mAdc)
f
T
Current Gain Bandwidth Product
(V
CE
=2.0Vdc, I
C
=500mAdc)
C
ob
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1.0MHz)
(1) h
FE
Classification B: 85~170, C: 120~240
h
FE
85
---
---
---
---
---
---
---
190
22
240
1.0
0.5
---
---
---
Vdc
Vdc
MHz
pF
DIM
A
B
C
D
E
F
G
H
J
K
L
M
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
3.700
4.10
.146
.161
4.000
---
.157
---
---
0.063
---
1.600
0.350
0.450
.014
.018
.050
.062
1.280
1.580
4.700
5.100
.185
.201
.307
.323
7.800
8.200
13.80
14.20
.543
.559
.600
.800
.024
.031
.014
.050
.096
.104
2.440
.022
0.350
1.270
2.640
.550
NOTE
www.mccsemi.com
Revision:
1
1 of
4
2009/04/24

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