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2SD5070

Description
isc Silicon NPN Power Transistor
File Size85KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SD5070 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD5070
DESCRIPTION
·High
Breakdown Voltage-
: V
CBO
= 1500V (Min)
·High
Switching Speed
·High
Reliability
·Built-in
Damper Diode
APPLICATIONS
·Designed
for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current- Continuous
2.5
A
I
CM
Collector Current-Peak
10
A
P
C
Collector Power Dissipation
@ T
C
=25℃
50
W
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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