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2SJ1151STR-E

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size115KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SJ1151STR-E Overview

Silicon N Channel MOS FET

2SJ1151STR-E Parametric

Parameter NameAttribute value
Parts packaging codeSC-83
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage450 V
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance5.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)6 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Preliminary
Datasheet
2SK1151(L), 2SK1151(S),
2SK1152(L), 2SK1152(S)
Silicon N Channel MOS FET
Application
High speed power switching
R07DS0397EJ0300
(Previous: REJ03G0907-0200)
Rev.3.00
May 16, 2011
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
4
D
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
1
2
3
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1151
2SK1152
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
450
500
±30
1.5
6
1.5
20
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
μs,
duty cycle
1%
2. Value at T
C
= 25
°
C
R07DS0397EJ0300 Rev.3.00
May 16, 2011
Page 1 of 6

2SJ1151STR-E Related Products

2SJ1151STR-E 2SJ1152STR-E 2SK1151_11
Description Silicon N Channel MOS FET Silicon N Channel MOS FET Silicon N Channel MOS FET
Parts packaging code SC-83 SC-83 -
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 -
Contacts 3 3 -
Reach Compliance Code compli compli -
Shell connection DRAIN DRAIN -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 450 V 500 V -
Maximum drain current (ID) 1.5 A 1.5 A -
Maximum drain-source on-resistance 5.5 Ω 6 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JESD-30 code R-PSSO-G2 R-PSSO-G2 -
Number of components 1 1 -
Number of terminals 2 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 6 A 6 A -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location SINGLE SINGLE -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Base Number Matches 1 1 -
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