2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○
Switching Regulator Applications
•
•
•
•
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0. 33
Ω
(typ.)
: |Y
fs
| = 8.5 S (typ.)
Unit: mm
: I
DSS
= 100
μA
(max) (V
DS
= 500 V)
: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
±30
15
60
150
765
15
15
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-16C1B
Weight: 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
0.833
50
Unit
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 5.78 mH, R
G
= 25
Ω,
I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
2SK4107
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 15 A
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±25 V, V
DS
= 0 V
I
G
= ±10
μA,
V
DS
= 0 V
V
DS
= 500 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 7.0 A
V
DS
= 10 V, I
D
= 7.0 A
Min
—
±30
—
500
2.0
—
4.0
—
—
—
—
Typ.
—
—
—
—
—
0.33
8.5
2450
15
220
50
Max
±10
—
100
—
4.0
0.4
—
—
—
—
—
pF
Unit
μA
V
μA
V
V
Ω
S
Turn-on time
Switching time
Fall time
—
90
—
ns
—
45
—
Turn-off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
—
—
—
—
175
48
26
22
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
= 15 A, V
GS
= 0 V
I
DR
= 15 A, V
GS
= 0 V
dI
DR
/ dt = 100 A /
μs
Min
—
—
—
—
—
Typ.
—
—
—
1050
13
Max
15
60
−1.7
—
—
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
TOSHIBA
K4107
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK4107
I
D
– V
DS
10
Common source
Tc
=
25°C
Pulse test
10
8
6
20
10
I
D
– V
DS
Common source
Tc
=
25°C
Pulse test
8
16
(A)
I
D
6
5.25
4
5
2
4.75
4.5
VGS
=
4 V
0
0
1
2
3
4
5
I
D
(A)
12
6
5.75
Drain current
Drain current
8
5.5
5.25
4
5
4.75
4.5
0
0
10
20
30
VGS
=
4 V
40
50
Drain−source voltage
V
DS
(V)
Drain−source voltage
V
DS
(V)
I
D
– V
GS
50
V
DS
– V
GS
10
Tc
= −55°C
40
V
DS
(V)
Common source
VDS
=
20 V
Pulse test
Common source
Tc
=
25°C
Pulse test
8
(A)
25
30
100
20
I
D
Drain−source voltage
6
15
4
8
2
ID
=
4 A
Drain current
10
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate−source voltage
V
GS
(V)
Gate−source voltage
V
GS
(V)
⎪Y
fs
⎪ −
I
D
(S)
100
1
Common source
VDS
=
20 V
Pulse test
Common source
Tc
=
25°C
Pulse test
R
DS (ON)
−
I
D
⎪Y
fs
⎪
Forward transfer admittance
Tc
= −55°C
25
10
100
Drain−source ON resistance
R
DS (ON)
(Ω)
VGS
=
10 V
15
1
1
10
100
0.1
0.1
1
10
100
Drain current
I
D
(A)
Drain current
I
D
(A)
3
2009-09-29
2SK4107
R
DS (ON)
– Tc
1.0
I
DR
−
V
DS
100
Drain−source ON resistance
R
DS (ON)
(Ω)
0.8
I
DR
(A)
Common source
VGS
=
10 V
Pulse test
Common source
Tc
=
25°C
Pulse test
0.6
ID
=
15 A
0.4
8
4
0.2
Drain reverse current
10
1
10
5
3
1
VGS
=
0,
−1
V
−0.6
−0.8
−1.0
−1.2
0
−80
−40
0
40
80
120
160
0.1
0
−0.2
−0.4
Case temperature
Tc
(°C)
Drain−source voltage
V
DS
(V)
Capacitance – V
DS
10000
5
Ciss
V
th
−
Tc
V
th
(V)
Gate threshold voltage
(pF)
4
1000
3
Capacitance
C
Coss
2
100
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
10
0.1
1
10
1
Crss
100
0
−80
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
−40
0
40
80
120
160
Drain−source voltage
V
DS
(V)
Case temperature
Tc
(°C)
P
D
−
Tc
200
500
Dynamic input/output characteristics
V
DS
(V)
Common source
ID
=
15 A
Tc
=
25°C
Pulse test
VDS
20
Drain power dissipation PD (W)
150
400
400
16
Drain−source voltage
100
200
200
200
8
50
100
VGS
VDS
=
100 V
4
0
0
0
40
80
120
160
200
0
20
40
60
80
0
100
Case temperature Tc (°C)
Total gate charge
Q
g
(nC)
4
2009-09-29
Gate−source voltage
300
VDS
=
100 V
400
12
V
GS
(V)
2SK4107
SAFE OPERATING AREA
1000
1000
E
AS
– T
ch
100
ID max (continuous)
100
μs
*
ID max (pulse)
*
E
AS
(mJ)
Avalanche energy
1000
800
Drain current I
D
(A)
10
1 ms
*
DC OPERATION
Tc
=
25°C
600
1
* Single pulse Ta = 25℃
0.1 Curves must be derated
linearly with increase in
temperature.
0.01
1
10
100
400
200
VDSS max
0
25
50
75
100
125
150
Drain-source voltage
V
DS
(V)
Channel temperature (initial)
T
ch
(°C)
15 V
−15
V
B
VDSS
I
AR
V
DD
Test circuit
Waveform
V
DS
R
G
=
25
Ω
V
DD
=
90 V, L
=
5.78 mH
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
VDSS
−
VDD
⎠
⎝
5
2009-09-29
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