Ordering number : ENA1369A
2SK4198FG
SANYO Semiconductors
DATA SHEET
2SK4198FG
Features
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ON-resistance RDS(on)=1.8
Ω
(typ.)
Input capacitance Ciss=360pF (typ.)
10V drive
Repetitive avalanche guarantee
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Avalanche Energy (Repetition)
Symbol
VDSS
VGSS
IDc *1
IDpack *2
IDP
PD
Tch
Tstg
EAS
IAV
EAR
Limited only by maximum temperature Tch=150°C
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO
’
s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO
’
s ideal heat dissipation condition)*3
Conditions
Ratings
600
±30
5
4
18
2.0
30
150
-
-55 to +150
55
4.5
3
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
mJ
Note :
*1
Shows chip capability.
*2
Package limited.
*3
SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=5mH, IAV=4.5A
*5
L
≤
5mH, Single pulse
Marking : K4198
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
http://semicon.sanyo.com/en/network
70710 TK IM TC-00002402 / N2608QB MS IM TC-00001733 No. A1369-1/6
2SK4198FG
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2.5A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=5A
VDS=200V, VGS=10V, ID=5A
VDS=200V, VGS=10V, ID=5A
IS=5A, VGS=0V
3
1.2
2.4
1.8
360
69
15
13
28
39
15
14.3
3.0
8.2
0.9
1.2
2.34
Ratings
min
600
100
±100
5
typ
max
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7529-001
4.7
2.54
3.3
10.16
3.18
15.87
6.68
A
15.8
3.23
2.76
1.47 MAX
0.8
1
2
3
12.98
DETAIL-A
(0.84)
0.5
FRAME
EMC
( 1.0)
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3SG
2.54
2.54
Switching Time Test Circuit
PW=10μs
D.C.≤0.5%
VDD=200V
Avalanche Resistance Test Circuit
L
ID=2.5A
RL=80Ω
≥50Ω
RG
VOUT
2SK4198FG
50Ω
VDD
VGS=10V
D
G
S
10V
0V
P.G
RGS=50Ω
2SK4198FG
No. A1369-2/6
2SK4198FG
For this package, a part of inner electrode is exposed. Please refer to the package outline for the detailedstructure.
So when mounting the device, please pay enough attention to the isolation with the heatsink.
According to the device mounting method, sometimes the insulation voltage may be decreased.
(refer to the below insulation characteristics)
Insulation
/ Ta=25°C / RH75%
Parameter
Symbol
VISO1
Lead & resin insulation *
* : AC voltage measurement
VISO2
VISO3
Conditions
Metal spacer Refer to Fig.1
Washer 5.8mm Refer to Fig.2
Insulated screw, Insulated washer
Ratings
min
typ
1600
2100
3900
max
Unit
Vrms
Vrms
Vrms
Fig.1
Fig.2
IT14077
IT14078
Insulation Measuring Diagram
Insulation voltage tester
AC / 1 s
M3 screw
Washer
Metal spacer
Operating pin
Washer
Lead
Al heatsink
Al heatsink
IT14079
No. A1369-3/6
2SK4198FG
12
ID -- VDS
Tc=25
°
C
10V
14
ID -- VGS
VDS=20V
10
12
Drain Current, ID -- A
Drain Current, ID -- A
15V
8
10
°
C
Tc= --25
8V
8
25
°
C
6
6
75
°
C
4
4
2
0
0
5
10
15
20
6V
VGS=5V
25
30
IT13521
2
0
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, VDS -- V
6
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
6
IT13522
RDS(on) -- Tc
ID=2.5A
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
4
4
3
Tc=75
°
C
25
°
C
--25
°
C
3
2
2
10
S=
VG
.5A
=2
I
V, D
1
1
0
5
6
7
8
9
10
11
12
13
14
15
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
7
|
y
fs
|
-- ID
IT13523
3
2
10
7
5
Case Temperature, Tc --
°
C
IT13524
IS -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
2
VDS=20V
Source Current, IS -- A
°
C
25
5
°
C
--2
Tc=
°
C
75
3
2
1.0
7
5
1.0
7
5
3
2
5
°
C
25
°
C
0.1
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
5
3
10
IT13525
7
0.01
0.2
0.4
Tc=7
3
2
0.6
--25
°
C
0.8
1.0
1.2
1.4
IT13526
SW Time -- ID
2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD=200V
VGS=10V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
10
7
Switching Time, SW Time -- ns
2
Ciss
100
7
5
3
2
td (off)
tr
Coss
tf
Crss
10
7
0.1
2
3
5
7
td(on)
1.0
2
3
5
7
10
IT13527
0
10
20
30
40
50
IT13528
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A1369-4/6
2SK4198FG
10
9
VGS -- Qg
VDS=200V
ID=5A
Drain Current, ID -- A
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=18A
IDc=5A
IDpack=4A
PW≤10μs
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
Operation in
this area is
limited by RDS(on).
Tc=25
°
C
Single pulse
2 3
5 7 1.0
2 3
5 7 10
1
10 0
μ
s
0
1m
μ
s
10 s
m
s
10
DC
0m
s
op
er
ati
on
0.01
0.1
2 3
5 7 100
2 3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
IT13529
35
Drain-to-Source Voltage, VDS -- V
PD -- Tc
5 71000
IT14229
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
30
25
20
15
10
5
0
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
120
EAS -- Ta
IT13531
Case Temperature, Tc --
°
C
IT13532
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°
C
No. A1369-5/6
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