4N29, 4N30, 4N31, 4N32, 4N33
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 series of
optically coupled isolators consist of an infrared
light emitting diode and NPN silicon
photodarlington in a space efficient dual in line
plastic package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
30V
50V
5V
150mW
80mA
5V
100mW
OPTION SM
SURFACE MOUNT
OPTION G
8.3 max
1.2
0.6
10.2
9.5
1.4
0.9
0.26
10.16
Total Power Dissipation
250mW
(derate linearly 3.3mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
28/11/08
DB90048
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
30
50
5
100
MIN TYP MAX UNITS
1.2
1.5
10
V
μA
V
V
V
nA
TEST CONDITION
I
F
= 50mA
V
R
= 6V
I
C
= 1mA (note 2)
I
C
= 100μA
I
E
= 100μA
V
CE
= 10V
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
8mA I
F
, 2mA I
C
8mA I
F
, 2mA I
C
(note 1)
(note 1)
V
IO
= 500V (note 1)
V
CC
= 10V, I
C
= 50mA,
I
F
= 200mA ,
Pulse Width = 1ms
fig.1
Coupled
Collector Output Current ( I
C
) (Note 2
)
4N32, 4N33
50
4N29, 4N30
10
4N31
5
Collector-emitter Saturation VoltageV
CE(SAT)
4N29,4N30,4N32,4N33
4N31
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Output Turn on Time
ton
Output Turn off Time
4N32, 4N33
toff
4N29, 4N30, 4N31
5300
7500
5x10
10
5
100
40
mA
mA
mA
1.0
1.2
V
V
V
RMS
V
PK
Ω
μs
μs
μs
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIGURE 1
V
CC
= 10V
I
F
= 200mA,
Pulse width = 1ms
I
C
= 50mA
t
r
Input
Output
Output
10%
90%
10%
90%
Input
t
on
t
off
t
f
28/11/08
DB90048-AAS/A4
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Current transfer ratio CTR (%)
Current Transfer Ratio vs.
Forward Current
10000
5000
1000
800
500
100
50
10
V
CE
= 10V
T
A
= 25°C
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
100
0
0.1 0.2 0.5
1
2
5
10 20 50 100
Forward current I
F
(mA)
Collector Current vs. Collector-emitter Voltage
100
50mA
20
Collector current I
C
(mA)
T
A
= 25°C
10mA
5mA
80
Forward current I
F
(mA)
80
60
40
60
40
20
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
2mA
20
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
I
F
= 1mA
Collector-emitter saturation voltage V
CE(SAT)
(V)
Relative current transfer ratio
I
F
= 8mA
I
C
= 2mA
I
F
= 10mA
V
CE
= 10V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
28/11/08
DB90048-AAS/A4
Embedded System
京公网安备 11010802033920号
EEWORLD
