UNISONIC TECHNOLOGIES CO., LTD
4N65K-MK
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Preliminary
Power MOSFET
The UTC
4N65K-MK
is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
< 3.1Ω @V
GS
= 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
4N65KL-TF3-T
4N65KG-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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QW-R205-014.a
4N65K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note2)
I
DM
16
A
50
mJ
Single Pulsed (Note3)
E
AS
Avalanche Energy
Repetitive (Note2)
E
AR
10.6
mJ
Power Dissipation
36
W
P
D
Derate above 25°C
0.288
W/°C
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5
V/ns
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=6.25mH, I
AS
=4A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.57
UNIT
°С/W
°С/W
PARAMETER
Junction to Ambient
Junction to Case
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QW-R205-014.a
4N65K-MK
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
10
μA
100 nA
-100 nA
V/°С
4.5
3.10
480
47
5.4
45
40
93
32
17.5
5.9
2.6
750
90
11
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
Forward
I
GSS
Reverse
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 30V, I
D
= 0.5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V,I
D
= 1.3A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
V
GS
= 0 V, I
D
= 250μA
650
V
DS
= 650 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
I
D
=250μA, Referenced to 25°C
2.5
0.6
20
1.4
4.4
17.6
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QW-R205-014.a
4N65K-MK
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-014.a
4N65K-MK
V
DS
V
GS
R
G
R
L
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DD
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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QW-R205-014.a
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