UNISONIC TECHNOLOGIES CO., LTD
4N90
4 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N90
is a N-channel enhancement MOSFET
adopting UTC’s advanced technology to provide customers with
DMOS, planar stripe technology. This technology is designed to
meet the requirements of the minimum on-state resistance and
perfect switching performance. It also can withstand high energy
pulse in the avalanche and communication mode.
The UTC
4N90
is particularly applied in high efficiency switch
mode power supplies.
FEATURES
* R
DS(ON)
< 4.2Ω @ V
GS
=10V
* High switching speed
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-252
TO-3PN
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Ordering Number
Lead Free
Halogen Free
4N90L-TA3-T
4N90G-TA3-T
4N90L-TF3-T
4N90G-TF3-T
4N90L-TF1-T
4N90G-TF1-T
4N90L-TF2-T
4N90G-TF2-T
4N90L-TF3T-T
4N90G-TF3T-T
4N90L-TM3-T
4N90G-TM3-T
4N90L-TN3-R
4N90G-TN3-R
4N90L-T3N-T
4N90G-T3N-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-479.F
4N90
MARKING
Power MOSFET
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QW-R502-479.F
4N90
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
900
V
Gate to Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4
A
4
A
Continuous
I
D
Continuous Drain Current
Pulsed (Note 2)
I
DM
16
A
570
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
14
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
140
TO-220
TO-220F/TO-220F1
38
TO-220F3
Power Dissipation
W
(T
C
=25°C)
TO-220F2
40
TO-251/TO-252
54
TO-3PN
208
P
D
TO-220
1.12
TO-220F/TO-220F1
0.304
TO-220F3
Derate above 25°C
W/°C
TO-220F2
0.322
TO-251/TO-252
0.43
TO-3PN
1.66
Operating Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=67mH, I
AS
=4A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
4. I
SD
≤4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
110
40
0.89
3.25
θ
JC
3.1
2.3
0.6
°C/W
°C/W
UNIT
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-252
TO-3PN
TO-220
TO-220F/TO-22F1
TO-22F3
Junction to Case
TO-220F2
TO-251/TO-252
TO-3PN
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QW-R502-479.F
4N90
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN
900
TYP
MAX UNIT
V
V
GS
=0V, I
D
=250µA
I
D
=250μA,
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=720V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
Forward
I
GSS
Gate- Source Leakage Current
Reverse
I
GSS
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=10V, I
D
=1.3A
Gate-Source Charge
Q
GS
(Note 1,2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
1.05
10
100
+100
-100
3.0
2.1
5.0
4.2
V/°C
µA
µA
nA
nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
1000 1400
49
85
13
18
33
8.9
10
70
188
188
88
50
100
220
220
120
4
16
1.4
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QW-R502-479.F
4N90
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-479.F
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