PSMN5R6-100PS
30 November 2012
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
•
High efficiency due to low switching and conduction losses
•
Improved dynamic avalanche performance
•
Suitable for standard level gate drive sources
1.3 Applications
•
DC-to-DC converters
•
Load switching
•
Motor control
•
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
V
GS
= 10 V; I
D
= 80 A; V
DS
= 50 V;
Fig. 13; Fig. 14
-
-
43
141
-
-
nC
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
100
100
306
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
4.3
5.6
mΩ
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
Avalanche Ruggedness
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 100 V; R
GS
= 50 Ω; unclamped
-
-
469
mJ
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NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
[1]
Continious current limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
TO-220AB (SOT78)
3. Ordering information
Table 3.
Ordering information
Package
Name
PSMN5R6-100PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
4. Marking
Table 4.
Marking codes
Marking code
PSMN5R6-100PS
Type number
PSMN5R6-100PS
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
V
GS
= 10 V; T
j
= 100 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
PSMN5R6-100PS
All information provided in this document is subject to legal disclaimers.
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
[1]
Max
100
100
20
95
100
Unit
V
V
V
A
A
-
© NXP B.V. 2012. All rights reserved
Product data sheet
30 November 2012
2 / 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
Symbol
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Parameter
peak drain current
total power dissipation
storage temperature
junction temperature
Conditions
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 3
T
mb
= 25 °C;
Fig. 2
Min
-
-
-55
-55
Max
539
306
175
175
Unit
A
W
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 100 V; R
GS
= 50 Ω; unclamped
[1]
-
-
100
539
A
A
Avalanche Ruggedness
non-repetitive drain-source
avalanche energy
[1]
150
I
D
(A)
100
(1)
-
469
mJ
Continious current limited by package.
003aad683
120
P
der
(%)
80
03aa16
50
40
0
0
50
100
150
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Continuous drain current as a function of
mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN5R6-100PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
30 November 2012
3 / 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
003aad702
t
p
=10 µ s
100
µs
DC
10
1
1 ms
10 ms
100 ms
10
- 1
1
10
10
2
V
DS
(V)
10
3
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
Min
-
Typ
0.3
Max
0.49
Unit
K/W
1
Z
th
(K/W)
10
- 1
003aad684
δ = 0.5
0.2
0.1
0.05
t
p
T
10
- 2
0.02
single shot
P
δ=
t
p
10
- 3
10
- 6
t
T
t
p
(s)
1
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN5R6-100PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
30 November 2012
4 / 13
NXP Semiconductors
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET in TO220
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 8; Fig. 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 9
I
DSS
drain leakage current
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 10
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
R
G
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
PSMN5R6-100PS
Min
100
90
2
1
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.02
-
2
2
-
4.3
0.97
Max
-
-
4
-
4.6
10
500
100
100
15.7
5.6
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Ω
Static characteristics
V
GS(th)
V
GSth
gate resistance
f = 1 MHz
Dynamic characteristics
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 15; Fig. 16
V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 15
V
DS
= 50 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 15; Fig. 16
V
DS
= 50 V; R
L
= 0.6 Ω; V
GS
= 10 V;
R
G(ext)
= 1.5 Ω
-
-
-
-
31
46
83
34
-
-
-
-
ns
ns
ns
ns
-
330
-
pF
-
561
-
pF
I
D
= 80 A; V
DS
= 50 V; V
GS
= 10 V;
Fig. 13; Fig. 14
-
-
-
-
141
36
43
8061
-
-
-
-
nC
nC
nC
pF
Source-drain diode
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
Fig. 17
All information provided in this document is subject to legal disclaimers.
-
0.79
1.2
V
© NXP B.V. 2012. All rights reserved
Product data sheet
30 November 2012
5 / 13
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