74LVC2G34
DUAL BUFFERS
Description
The 74LVC2G34 is a dual buffer gate with standard push-pull outputs.
The device is designed for operation with a power supply range of
1.65V to 5.5V. The inputs are tolerant to 5.5V allowing this device to
be used in a mixed voltage environment. The device is fully specified
for partial power down applications using I
OFF
. The I
OFF
circuitry
disables the output preventing damaging current backflow when the
device is powered down.
The gate performs the positive Boolean function:
Pin Assignments
( Top View )
1A 1
GND 2
2A 3
SOT26 / 363
( Top View)
1A
( Bottom View )
2A 3
4 2Y
5 Vcc
6 1Y
( Top View )
1A
1
6 1Y
5 Vcc
4 2Y
GND 2
2A 3
GND
2A
1
2
3
6
5
( Top View )
6 1Y
5 Vcc
4 2Y
1A
GND
2A
1
2
3
6 1Y
5 Vcc
4 2Y
X2-DFN1410-6
Y
½
A
1Y
Vcc
2Y
4
X1-DFN1010-6
Features
Wide Supply Voltage Range from 1.65V to 5.5V
±24mA Output Drive at 3.0V
CMOS Low Power Consumption
I
OFF
Supports Partial-Power-Down Mode Operation
Inputs Accept up to 5.5V
ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115)
Exceeds 2000-V Human Body Model (A114)
Exceeds 1000-V Charged Device Model (C101)
Latch-Up Exceeds 100mA per JESD 78, Class I
DFN1409 Package Designed as a Direct Replacement for Chip
Scale Packaging
Range of Package Options SOT26, SOT363, X1-DFN1010-6,
X2-DFN1010-6, X2-DFN1409-6, and X2-DFN1410-6
Leadless Packages Named per JESD30E
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
GND 2
1A 1
DFN1409
Chip Scale
Alternative
X2-DFN1010-6
Applications
Voltage Level Shifting
General Purpose Logic
Power Down Signal Isolation
Wide Array of Products Such as:
PCs, Networking, Notebooks, Netbooks, Tablets
Computer Peripherals, Hard Drives, SSD, CD/DVD ROM
TV, DVD, DVR, Set Top Box
Cell Phones, Personal Navigation / GPS
MP3 Players, Cameras, Video Recorders
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and < 1000 ppm antimony compounds.
74LVC2G34
Document number: DS35165 Rev. 6 - 2
1 of 14
www.diodes.com
March 2015
© Diodes Incorporated
74LVC2G34
Absolute Maximum Ratings
(Notes 6, 7) (@T
A
= +25° unless otherwise specified.)
C,
Symbol
ESD HBM
ESD CDM
ESD MM
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
—
T
J
T
STG
Notes:
Parameter
Human Body Model ESD Protection
Charged Device Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage Applied to Output in High Impedance or I
OFF
State
Voltage Applied to Output in High or Low State
Input Clamp Current V
I
< 0
Output Clamp Current V
O
< 0
Continuous Output Current
Continuous Current through V
DD
or GND
Operating Junction Temperature
Storage Temperature
Rating
2
1
200
-0.5 to +6.5
-0.5 to +6.5
-0.5 to +6.5
-0.3 to V
CC
+0.5
-50
-50
-50
±100
-40 to +150
-65 to +150
Unit
kV
kV
V
V
V
V
V
mA
mA
mA
mA
°
C
°
C
6. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be
within recommend values.
7. Forcing the maximum allowed voltage could cause a condition exceeding the maximum current or conversely forcing the maximum current could cause a
condition exceeding the maximum voltage. The ratings of both current and voltage must be maintained within the controlled range.
Recommended Operating Conditions
(Note 8) (@T
A
= +25° unless otherwise specified.)
C,
Symbol
V
CC
Operating Voltage
Parameter
Operating
Data Retention Only
V
CC
= 1.65V to 1.95V
V
IH
High-Level Input Voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 1.65V to 1.95V
V
IL
Low-Level Input Voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6V
V
CC
= 4.5V to 5.5V
V
I
V
O
Input Voltage
Output Voltage
V
CC
= 1.65V
V
CC
= 2.3V
I
OH
High-Level Output Current
V
CC
= 3V
V
CC
= 4.5V
Min
1.65
1.5
0.65 X V
CC
1.7
2
0.7 X V
CC
—
—
—
—
0
0
—
—
—
—
—
Max
5.5
—
—
—
—
—
0.35 X V
CC
0.7
0.8
0.3 X V
CC
5.5
V
CC
-4
-8
-16
-24
-32
mA
V
V
V
V
Unit
V
V
74LVC2G34
Document number: DS35165 Rev. 6 - 2
3 of 14
www.diodes.com
March 2015
© Diodes Incorporated
74LVC2G34
Recommended Operating Conditions
(Note 8) (@T
A
= +25° unless otherwise specified.)
C,
Symbol
Parameter
V
CC
= 1.65V
V
CC
= 2.3V
I
OL
Low-Level Output Current
V
CC
= 3V
V
CC
= 4.5V
V
CC
= 1.8V ± 0.15V, 2.5V ± 0.2V
Δt/ΔV
Input Transition Rise or Fall Rate
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
T
A
Note:
Min
—
—
—
—
—
—
—
—
-40
Max
4
8
16
24
32
20
10
5
+125
Unit
mA
ns/V
Operating Free-air Temperature
—
°
C
8. Unused inputs should be held at V
CC
or Ground.
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
Parameter
Test Conditions
I
OH
= -100μA
I
OH
= -4mA
V
OH
High-Level Output
Voltage
I
OH
= -8mA
I
OH
= -16mA
I
OH
= -24mA
I
OH
= -32mA
I
OL
= 100μA
I
OL
= 4mA
V
OL
Low-Level Output
Voltage
I
OL
= 8mA
I
OL
= 16mA
I
OL
= 24mA
I
OL
= 32mA
I
I
I
OFF
I
CC
ΔI
CC
Input Current
Power Down Leakage
Current
Supply Current
Additional Supply
Current
V
I
= 5.5V or GND
V
I
or V
O
= 5.5V
V
I
= 5.5V or GND, I
O
= 0
Input at V
CC
–0.6V
V
CC
+40° to +85°
C
C
Min
Max
—
—
—
—
—
—
0.1
0.45
0.3
0.4
0.55
0.55
±5
±10
10
500
-40° to +125°
C
C
Min
V
CC
– 0.1
0.95
1.7
1.9
2.0
3.4
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
—
—
—
0.1
0.70
0.45
0.60
0.80
0.80
±20
±20
40
5000
μA
μA
μA
μA
V
V
Unit
1.65V to 5.5V V
CC
– 0.1
1.65V
2.3V
3V
4.5V
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
0 to 5.5V
0
1.65V to 5.5V
3V to 5.5V
1.2
1.9
2.4
2.3
3.8
—
—
—
—
—
—
—
—
—
—
74LVC2G34
Document number: DS35165 Rev. 6 - 2
4 of 14
www.diodes.com
March 2015
© Diodes Incorporated
74LVC2G34
Package Characteristics
(@T
A
= +25° V
CC
= 3.3V, unless otherwise specified.)
C,
Symbol
C
I
Parameter
Input Capacitance
Package
Typical of All Packages
SOT26
SOT363
θ
JA
Thermal Resistance Junction- X2-DFN1410-6
to-Ambient
X2-DFN1409-6
X1-DFN1010-6
X2-DFN1010-6
SOT26
SOT363
θ
JC
Thermal Resistance Junction- X2-DFN1410-6
to-Case
X2-DFN1409-6
X1-DFN1010-6
X2-DFN1010-6
Note:
Conditions
V
CC
= 3.3V
V
I
= V
CC
or GND
Min
—
—
—
Typ
3.5
204
371
430
450
495
Max
—
—
—
—
—
Unit
pF
(Note 9)
—
—
°
C/W
—
—
—
(Note 9)
—
—
510
52
143
190
225
245
—
—
—
—
—
°
C/W
—
250
—
9. Test condition for all packages: Device mounted on FR-4 substrate PC board, 2oz copper with minimum recommended pad layout.
Switching Characteristics
T
A
= -40° to +85°
C
L
= 30 or 50pF (see Figure 1)
C
C,
From
(Input)
A
To
(Output)
Y
V
CC
= 1.8V
±0.15V
Min
0.5
Max
8.6
Min
0.5
V
CC
= 2.5V
±0.2V
Max
4.4
Min
0.5
V
CC
= 3.3V
±0.3V
Max
4.1
Min
0.5
V
CC
= 5V
±0.5V
Max
3.2
ns
Unit
Parameter
t
PD
T
A
= -40° to +125°
C
L
= 30 or 50pF (see Figure 1)
C
C,
Parameter
t
PD
From
(Input)
A
To
(Output)
Y
V
CC
= 1.8V
±0.15V
Min
0.5
Max
10.8
Min
0.5
V
CC
= 2.5V
±0.2V
Max
5.5
Min
0.5
V
CC
= 3.3V
±0.3V
Max
5.1
Min
0.5
V
CC
= 5V
±0.5V
Max
4.0
ns
Unit
Operating Characteristics
T
A
= +25°
C
Parameter
C
PD
Power Dissipation
Capacitance
Test
Conditions
f = 10MHz
V
CC
= 1.8V
Typ
17
V
CC
= 2.5V
Typ
19
V
CC
= 3.3V
Typ
20
V
CC
= 5V
Typ
21
Unit
pF
74LVC2G34
Document number: DS35165 Rev. 6 - 2
5 of 14
www.diodes.com
March 2015
© Diodes Incorporated
ARM Technology
京公网安备 11010802033920号
EEWORLD
