74VHC540FT,74VHC541FT
CMOS Digital Integrated Circuits
Silicon Monolithic
74VHC540FT,74VHC541FT
1. Functional Description
• Octal Bus Buffer
74VHC540FT: Inverted, 3-State Outputs
74VHC541FT: Non-Inverted, 3-State Outputs
2. General
The 74VHC540FT/74VHC541FT are advanced high speed CMOS OCTAL BUS BUFFERs fabricated with silicon
gate C
2
MOS technology.
They achieve the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
The 74VHC540FT is an inverting type, and the 74VHC541FT is a non-inverting type.
When either G1 or G2 are high, the terminal outputs are in the high-impedance state.
An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply
voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
High speed: Propagation delay time = 3.7 ns (typ.) at V
CC
= 5.0 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
High noise immunity: V
NIH
= V
NIL
= 28% V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 5.5 V
Low noise: V
OLP
= 1.0 V (max)
(10) Pin and function compatible with 74 series (74AC/HC/AHC/LV etc.) 540 or 541 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP20B
Start of commercial production
©2017 Toshiba Corporation
1
2013-03
2017-02-22
Rev.8.0
74VHC540FT,74VHC541FT
5. Pin Assignment
74VHC540FT
74VHC541FT
6. Marking
74VHC540FT
74VHC541FT
7. IEC Logic Symbol
74VHC540FT
74VHC541FT
©2017 Toshiba Corporation
2
2017-02-22
Rev.8.0
74VHC540FT,74VHC541FT
8. Truth Table
Input G1
H
X
L
L
Input G2
X
H
L
L
Input An
X
X
H
L
Output Yn
Z
Z
H
L
Output Yn
Z
Z
L
H
X:
Z:
Yn:
Yn:
Don't care
High impedance
74VHC541FT
74VHC540FT
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±75
180
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
V
CC
= 3.3
±
0.3 V
V
CC
= 5.0
±
0.5 V
Test Condition
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 100
0 to 20
Unit
V
V
V
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2017 Toshiba Corporation
3
2017-02-22
Rev.8.0
74VHC540FT,74VHC541FT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.36
0.36
±0.25
±0.1
4.0
µA
µA
µA
V
V
V
Unit
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.48
3.80
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.44
0.44
±2.50
±1.0
40.0
µA
µA
µA
V
V
V
Unit
V
©2017 Toshiba Corporation
4
2017-02-22
Rev.8.0
74VHC540FT,74VHC541FT
11.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.40
3.70
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.55
0.55
±10.0
±2.0
80.0
µA
µA
µA
V
V
V
Unit
V
©2017 Toshiba Corporation
5
2017-02-22
Rev.8.0
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