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ACE4440B

Description
N-Channel Enhancement Mode MOSFET
File Size650KB,6 Pages
ManufacturerACE [ACE Technology Co., Ltd.]
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ACE4440B Overview

N-Channel Enhancement Mode MOSFET

ACE4440B
N-Channel Enhancement Mode MOSFET
Description
The ACE4440B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
V
DS
=60V
I
D
=6A (V
GS
=10V)
R
DS(ON)
<35mΩ (V
GS
=10V)
R
DS(ON)
<40mΩ (V
GS
=4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Max
60
±20
6
4.8
30
3
2
Unit
V
V
A
A
W
Drain Current (Pulsed)
Power Dissipation
Operating temperature / storage temperature
T
J
/T
STG
-55~150
Packaging Type
SOP-8
Ordering information
ACE4440B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2
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