Analog Power
AM4892N
Dual N-Channel 150-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
r
DS(on)
(mΩ)
V
DS
(V)
255 @ V
GS
= 10V
150
290 @ V
GS
= 4.5V
I
D
(A)
2.3
2.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
150
V
GS
Gate-Source Voltage
±20
T
A
=25°C
2.3
I
D
Continuous Drain Current
a
T
A
=70°C
1.8
b
I
DM
Pulsed Drain Current
10
a
I
S
2.8
Continuous Source Current (Diode Conduction)
T
A
=25°C
2.1
P
D
Power Dissipation
a
T
A
=70°C
1.3
T
J
, T
stg
-55 to 150
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
Maximum Junction-to-Ambient
a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
62.5
R
θJA
110
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4892N_1A
Analog Power
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Test Conditions
Static
V
DS
= V
GS
, I
D
= 250 uA
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= 120 V, V
GS
= 0 V
V
DS
= 120 V, V
GS
= 0 V, T
J
= 55°C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 1.8 A
V
GS
= 4.5 V, I
D
= 1.7 A
V
DS
= 15 V, I
D
= 1.8 A
I
S
= 1.4 A, V
GS
= 0 V
Dynamic
V
DS
= 75 V, V
GS
= 4.5 V, I
D
= 1.8 A
Min
1
Typ
AM4892N
Max
Unit
V
uA
uA
A
±10
1
25
1.1
255
290
10
0.7
10
3.1
5.5
11
12
58
19
1070
87
67
mΩ
S
V
nC
V
DD
= 75 V, R
L
= 41.7 Ω, I
D
= 1.8 A,
V
GEN
= 10 V, R
GEN
= 6 Ω
ns
V
DS
= 15 V, V
GS
= 0 V, f =1 MHz
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2
Publication Order Number:
DS_AM4892N_1A
Analog Power
Typical Electrical Characteristics
0.4
0.35
RDS(on) - On-Resistance(Ω)
4
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
ID-Drain Current (A)
4
5
0
0
1
2
4.5V
6V,8V,10V
4V
ID - Drain Current (A)
5
TJ = 25°C
AM4892N
3
2
1
3
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
0.6
RDS(on) - On-Resistance(Ω)
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
0.01
0.2
10
TJ = 25°C
I
D
= 1.8A
IS - Source Current (A)
1
2. Transfer Characteristics
TJ = 25°C
0.1
0.4
0.6
0.8
1
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
5
4.5
4
ID - Drain Current (A)
3.5
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
4V
1600
4. Drain-to-Source Forward Voltage
10V,8V,6V
4.5V
Capacitance (pf)
F = 1MHz
1400
1200
1000
800
600
400
200
0
0
Coss
Crss
5
10
15
20
Ciss
VDS-Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
3
6. Capacitance
Publication Order Number:
DS_AM4892N_1A
Analog Power
Typical Electrical Characteristics
10
VGS-Gate-to-Source Voltage (V)
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
0.5
-50
-25
0
25
50
75
V
DS
= 75V
RDS(on) - On-Resistance(Ω)
(Normalized)
I
D
= 1.8A
2.5
AM4892N
2
1.5
1
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
100
PEAK TRANSIENT POWER (W)
10 uS
8. Normalized On-Resistance Vs
Junction Temperature
140
120
100
80
60
40
20
0
0.001
10
ID Current (A)
100 uS
1 mS
10 mS
1
100 mS
1 SEC
10 SEC
100 SEC
0.1
1
0.1
1
10
100
1000
DC
Idm limit
Limited by
RDS
0.01
VDS Drain to Source Voltage (V)
0.01
0.1
1
10
100
1000
t1 TIME (SEC)
9. Safe Operating Area
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
10. Single Pulse Maximum Power Dissipation
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 110
°C
/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t1 TIME (sec)
1
10
100
1000
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM4892N_1A
Analog Power
Package Information
AM4892N
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not
Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar
Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic
Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess
Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The
Foot.
© Preliminary
5
Publication Order Number:
DS_AM4892N_1A
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