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BAS40W-04

Description
0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size355KB,2 Pages
ManufacturerHTSEMI( Jin Yu Semiconductor )
Websitehttp://www.htsemi.com
Download Datasheet Parametric Compare View All

BAS40W-04 Overview

0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS40W-04 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage40 V
Maximum average forward current0.2000 A
BAS40W/-04/-05/-06
SCHOTTKY DIODE
SOT-323
FEATURES
Low Forward Voltage
Fast Switching
BAS40W MARKING: 43•
BAS40W-06 MARKING: 46
BAS40W-05 MARKING:45
BAS40W-04 MARKING:44
Maximum Ratings @T
A
=25℃
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking Voltage
Forward continuous Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction temperature
Storage temperature range
Symbol
V
RRM
V
RWM
V
R
I
FM
P
D
R
θJA
T
J
T
STG
200
150
833
125
-65-125
mA
mW
℃/W
40
V
Limits
Unit
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward
voltage
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
I
R
= 10
μ
A
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0,f=1MHz
I
rr
=1mA, I
R
=I
F
=10mA
R
L
=100Ω
conditions
MIN
40
200
380
1000
5
5
MAX
UNIT
V
nA
mV
Diode capacitance
Reverse Recovery time
pF
nS
1 
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05

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BAS40W-04 BAS40W BAS40W-05 BAS40W-06
Description 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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