BAS521
High voltage switching diode
SOD-523
FEATURES
•
High switching speed: max. 50 ns
•
High continuous reverse voltage: 300 V
•
Repetitive peak forward current: 625 mA
•
Ultra small plastic SMD package.
APPLICATIONS
•
High speed switching
•
High voltage switching.
Dimensions in inches and (millimeters)
DESCRIPTION
The BAS521 is a high-voltage switching diode fabricated
in planar technology and encapsulated in an ultra small
SOD523 (SC-79) plastic SMD package.
PINNING
PIN
1
2
cathode
anode
DESCRIPTION
LIMITING VALUES
In accordance with the absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
Note
1. T
s
is the temperature at the soldering point of the cathode tab.
PARAMETER
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
s
≤
90
°C;
note 1
t
p
= 1 ms;
δ
= 0.25
t
p
= 1
µs;
square wave; T
j
= 25
°C
prior to surge
T
s
≤
90
°C;
note 1
CONDITIONS
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
300
300
250
1
4.5
500
+150
150
+150
UNIT
V
V
mA
A
A
mW
°C
°C
°C
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BAS521
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
BR
V
F
I
R
t
rr
PARAMETER
breakdown voltage
forward voltage
reverse current
reverse recovery time
I
R
= 100
µA
I
F
= 100 mA; note 1
V
R
= 250 V
V
R
= 250 V; T
a
= 150
°C
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at
I
R
= 3 mA
V
R
= 0 V; f = 1 MHz
CONDITIONS
−
−
−
−
MIN.
300
TYP.
340
0.95
30
40
16
−
1.1
150
100
50
MAX.
UNIT
V
V
nA
µA
ns
C
d
Note
diode capacitance
−
0.4
5
pF
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
Notes
1. Soldering point of the cathode tab.
2. Refer to SOD523 (SC-79) standard mounting conditions.
PARAMETER
thermal resistance from junction to solder point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
120
500
UNIT
K/W
K/W
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BAS521
GRAPHICAL DATA
handbook, halfpage
500
MHC618
IF
(mA)
10
2
handbook, halfpage
IR
(µA)
10
MHC619
400
300
1
200
10
−1
100
(1) (2)
(3)
0
0
0.5
1
VF (V)
1.5
10
−2
0
40
80
120
160
200
Tj (°C)
(1) T
amb
= 150
°C.
(2) T
amb
= 75
°C.
(3) T
amb
=25
°C.
V
R
= V
Rmax
; typical values.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of junction
temperature.
handbook, halfpage
300
MHC620
handbook, halfpage
0.42
MHC621
IF
(mA)
200
Cd
(pF)
0.38
100
0.34
0
0
50
100
150
200
Tamb (°C)
0.3
0
10
20
30
VR (V)
40
Fig.4
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
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BAS521
handbook, full pagewidth
10
2
MBG703
IFSM
(A)
10
1
10
−1
1
Based on square wave currents.
T
j
= 25°C prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.6 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
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