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BAS70-06-V

Description
0.2 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size154KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BAS70-06-V Overview

0.2 A, 70 V, SILICON, SIGNAL DIODE

BAS70-06-V Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.2000 A
BAS70-00-V to BAS70-06-V
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on
voltage and fast switching
e3
• These devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
BAS70-00-V
3
BAS70-04-V
3
Top View
1
2
1
2
BAS70-05-V
BAS70-06-V
3
Mechanical Data
Case:
SOT23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
1
18439
3
Top View
2
1
2
Parts Table
Part
BAS70-00-V
BAS70-04-V
BAS70-05-V
BAS70-06-V
Ordering code
BAS70-00-V-GS18 or BAS70-00-V-GS08
BAS70-04-V-GS18 or BAS70-04-V-GS08
BAS70-05-V-GS18 or BAS70-05-V-GS08
BAS70-06-V-GS18 or BAS70-06-V-GS08
73
74
75
76
Type Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
1)
1)
Test condition
Symbol
V
RRM
=
V
RWM
=
V
R
I
F
Value
70
200
1)
600
1)
200
1)
Unit
V
mA
mA
mW
t
p
< 1 s
I
FSM
P
tot
Device on fiberglass substrate, see layout on next page
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
500
1)
125
- 65 to + 125
Unit
K/W
°C
°C
Device on fiberglass substrate, see layout on next page
Document Number 85702
Rev. 1.7, 27-Sep-06
www.vishay.com
1

BAS70-06-V Related Products

BAS70-06-V BAS70-00-V BAS70-04-V BAS70-05-V
Description 0.2 A, 70 V, SILICON, SIGNAL DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3
Number of components 1 1 1 1
surface mount Yes YES Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location pair DUAL pair pair
Diode component materials silicon SILICON silicon silicon
Diode type Signal diode RECTIFIER DIODE Signal diode Signal diode
Maximum reverse recovery time 0.0050 us 0.005 µs 0.0050 us 0.0050 us
Maximum repetitive peak reverse voltage 70 V 70 V 70 V 70 V
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-3 - ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-free Yes - Yes Yes
EU RoHS regulations Yes - Yes Yes
China RoHS regulations Yes - Yes Yes
state DISCONTINUED - DISCONTINUED DISCONTINUED
packaging shape Rectangle - Rectangle Rectangle
Package Size SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
terminal coating NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Packaging Materials Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY - SCHOTTKY SCHOTTKY
structure single - single single
Maximum power consumption limit 0.2000 W - 0.2000 W 0.2000 W
Maximum average forward current 0.2000 A - 0.2000 A 0.2000 A

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