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BAS70BRW

Description
0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size188KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BAS70BRW Overview

0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAS70TW /DW-04 /
DW-05 /DW-06 /BRW
200mW
SCHOTTKY BARRIER
Diode
SOT-363
Features
Fast Switching
Low Forward Voltage Drop
Low Power Dissipation
Ultra-Small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maxim um Ratings
Symbol
V
RRM
V
RWM
V
R
I
F
I
FSM
R
©
JA
P
D
T
STG&
T
J
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Peak Forward Surge Current @<1.0s
Thermal Resistance Junction to Ambient
Power dissipation
Storage &Operating JunctionTemperature
Rating
70
70
100
625
200
-55 to +125
Unit
V
mA
mA
/W
mW
K
G
B
C
A
H
M
J
D
L
NEW PRODUCT
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
I
R
Parameter
Reverse Voltage Leakage
Current
Min
---
Max
100nA
Test Conditions
V
R
=50V
DIM
A
B
C
D
G
H
J
K
L
M
INCHES
MIN
.006
.045
.085
.026
.047
.071
---
.035
.010
.003
DIMENSIONS
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
MAX
.014
.053
.096
.055
.087
.004
.043
.018
.006
NOTE
V
F
C
T
t
rr
Forward Voltage
Total Capacitance
Reverse Recovery Time
---
---
---
---
0.41V
1.0V
2pF
5.0ns
I
F
=1mA
I
F
=15mA
V
R
=0V, f=1MHZ
I
F
=I
R
=10mA,
I
rr
=0.1XI
R
,R
L
=100
A
1
C
2
C
2
C
1
A
2
A
2
AC
1
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
BAS70DW-06
Marking: K76
BAS70DW-05
Marking: K71
BAS70DW-04
Marking: K74
BAS70BRW
Marking: K75
BAS70TW
Marking: K73
Revision:
A
www.mccsemi.com
1 of 3
2011/01/01

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