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BAS86_12

Description
0.2 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size58KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BAS86_12 Overview

0.2 A, SILICON, SIGNAL DIODE

BAS86
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• This diode is also available in a DO-35 case with
type designation BAT86.
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
94 9371
Mechanical Data
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
Applications
• Applications where a very low forward voltage is
required
Parts Table
Part
BAS86
Ordering code
BAS86-GS18 or BAS86-GS08
Type marking
-
Remarks
Tape and reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Continuous reverse voltage
Forward continuous current
Repetitive peak forward current
Power dissipation
1)
1)
Test condition
Symbol
V
R
I
F
Value
50
200
1)
500
1)
200
1)
Unit
V
mA
mA
mW
t
p
< 1 s,
½ ≤
0.5
I
FRM
P
tot
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Ambient operating temperature
range
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
amb
T
stg
Value
300
1)
125
- 65 to + 125
- 65 to +150
Unit
K/W
°C
°C
°C
Valid provided that electrodes are kept at ambient temperature
Document Number 85511
Rev. 1.8, 13-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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Description 0.2 A, SILICON, SIGNAL DIODE 0.2 A, SILICON, SIGNAL DIODE

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