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BAT42W_13

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size235KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric Compare View All

BAT42W_13 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT42W_13 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAT42W
THRU
BAT43W
200mW
Schottky Diodes
30 Volts
SOD123
A
B
Features
Halogen
free available upon request by adding suffix "-HF"
For General Purpose applications
These diodes are also available in the DO-35 case with the type
designations BAT42 to BAT43 and in the MiniMELF case with the
type designations LL42 to LL43.
Lead Free Finish/RoHS Compliant("P" Suffix
designates RoHS Compliant. See ordering information)
Mechanical Data
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking code: BAT42W=S7
,L2
BAT43W=S8 ,L3
Maximum Ratings
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
R
JA
T
J
T
STG
Symbol
V
(BR)R
Rating
Repetitive Peak Reverse Voltage
Forward DC Current at Tamb=25
O
C
Repetitive Peak Forward Current at tp<1s,
Tamb=25
O
C
(1)
Surge Forward Current at tp<10ms,
Tj=25
O
C
(1)
Power Dissipation at Tamb=65
O
C
(1)
Thermal Resistance Junction to Ambient
Air
(1)
Junction Temperature
Storage Temperature
Parameter
Reverse Breakdown Voltage
(I
R
=100uAdc Pulsed)
Forward Voltage
(2)
I
F
=200mAdc
I
F
=10mAdc
I
F
=50mAdc
I
F
=2.0mAdc
I
F
=15mAdc
Leakage Current
(2)
(V
R
=25Vdc)
(V
R
=25Vdc, Tj=100
O
C)
Capacitance
(V
R
=1.0, f=1.0MHz)
Reverse Recovery Time
(I
F
=10mA, I
R
=10mA)
(Irr=1.0mA, R
L
=100OHM)
Min
30
---
---
---
0.26
---
---
---
---
---
Rating
30
200
500
4.0
200
300
-55 to +125
-55 to +150
Typ
---
---
---
---
---
---
---
---
7.0
---
Max
---
1.0
0.4
0.65
0.33
0.45
0.5
100
---
5.0
O
C
E
Unit
V
mA
mA
A
mW
C/W
O
O
H
D
G
J
C
C
DIM
A
B
C
D
E
G
H
J
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Units
V
V
F
BAT42W
BAT42W
BAT43W
BAT43W
V
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.140
.152
3.55
3.85
.100
.112
2.55
2.85
.055
.071
1.40
1.80
-----
.053
-----
1.35
.012
.031
0.30
.78
.006
-----
0.15
-----
-----
.01
-----
.25
-----
.006
-----
.15
SUGGESTED SOLDER
PAD LAYOUT
NOTE
I
R
C
tot
t
rr
uA
pF
0.048”
0.093
ns
Notes:
0.036”
1.
Valid provided that electrodes are kept at ambient temperature
2.
Pulse Test tp<300us, Duty Cycle<2%
Revision:
B
www.mccsemi.com
1 of 3
2013/01/01

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BAT42W_13 BAT42W
Description 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE
Number of terminals 2 2
Number of components 1 1
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY
structure single single
Diode component materials silicon silicon
Diode type Signal diode Signal diode
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum average forward current 0.2000 A 0.2000 A
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