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BAT43W

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    Small signal Schottky diode   
File Size390KB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BAT43W Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT43W Parametric

Parameter NameAttribute value
Case StyleSOD-123
IF(A)200
VRRM (V)30
IFSM (A)4.0
VF (V)0.45
@ IF (A)15
Maximum reverse current0.5
TRR(nS)
classDiodes
BAT42W-BAT43W
Schottky Diodes
+
SOD-123
0.022(0.55)
Typ. Min.
0.053(1.35)
Max.
-
Features
Low Forward Voltage Drop
Fast Switching Time
Surface Mount Package Ideally Suited for Automatic Insertion
MARKING:
BAT42W S7
BAT43W S8
0.006(0.15)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.112(2.85)
0.100(2.55)
0.010(0.25)
Min.
0.067(1.70)
0.055(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Peak Repetitive Peak reverse voltage
Working Peak
DC Blocking
Voltage
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
I
FSM
P
D
R
θJA
T
STG
21
200
500
4.0
200
500
-55~+125
V
mA
mA
A
mW
℃/W
30
V
BAT42W/BAT43W
Unit
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current @t<1.0s
Peak forward surge current @<10ms
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
Electrical Ratings @T
A
=25℃
Parameter
Reverse Breakdown Voltage
All Types
BAT42W
Forward voltage
BAT42W
BAT43W
BAT43W
Reverse current
Capacitance between terminals
Reverse Recovery Time
Symbol
V
(BR)R
V
F
V
F
V
F
V
F
V
F
I
R
C
T
t
rr
0.26
Min.
30
1.0
0.4
0.65
0.33
0.45
0.5
10
5
Typ.
Max.
Unit
V
V
V
V
V
V
μA
pF
ns
Conditions
IR=10μA
I
F
=200mA
I
F
=10mA
I
F
=50mA
I
F
=2mA
I
F
=15mA
V
R
=25V
V
R
=1.0V,f=1.0MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
http://www.luguang.cn
mail:lge@luguang.cn

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