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BAT54ARF

Description
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size149KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAT54ARF Overview

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAT54 / A / C / S
Taiwan Semiconductor
Small Signal Product
230mW SMD Schottky Barrier Diode
FEATURES
- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOT-23
MECHANICAL DATA
- Case: Bend lead SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 8 ± 0.5 mg
- Marking Code: KL1,KL2,KL3,KL4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak Pepetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward current (tp≤1S;δ≤0.5)
Forward Surge Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature
PARAMETER
Reverse Breakdown Voltage
I
R
=100µA
I
F
=0.1mA
I
F
=1mA
Forward Voltage
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current
Total Capacitance
Reverse Recovery Time
V
R
=25V
V
R
=1V, f=1.0MHz
I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
I
R
C
T
t
rr
V
F
@ t<1.0s
SYMBOL
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
Pd
R
θJA
T
j
, T
STG
SYMBOL
V
(BR)
MIN
30
--
--
--
--
--
--
--
--
200
300
600
200
500
-55 to 125
MAX
--
0.24
0.32
0.40
0.50
1.00
2.0
10
5
mA
mA
mA
mW
°C/W
30
V
VALUE
UNIT
°C
UNIT
V
V
V
V
V
V
µA
pF
ns
Document Number: DS_S1404001
Version: E14
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