BAT54S datasheet, PDF - EEWORLD Datasheet

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BAT54S: Description0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size262KB，2 Pages; ManufacturerHTSEMI（ Jin Yu Semiconductor ）; Websitehttp://www.htsemi.com

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BAT54S Overview

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAT54S Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	2
Processing package description	SOT-23, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	silicon
Maximum power consumption limit	0.2000 W
Diode type	Signal diode
Maximum repetitive peak reverse voltage	30 V
Maximum average forward current	0.2000 A

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BAT54/A/C/S

SCHOTTKY

DIODES

SOT-23

FEATURES

Extremely Fast Switching Speed

BAT54 MARKING:

KL1

BAT54A MARKING:

KL2

BAT54C MARKING:

KL3

BAT54S MARKING:

KL4

Maximum Ratings @T

A

=25℃

Parameter

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking

Voltage

Symbol

V

RRM

V

RWM

V

R

I

FM

P

D

T

STG

200

-55-150

mA

mW

℃

30

V

Limits

Unit

Forward Continuous Current

Power Dissipation

Storage temperature

Electrical Characteristics @T

A

=25℃

Parameter

Reverse Breakdown Voltage

Symbol

V

(BR)R

V

F1

V

F2

Forward voltage

V

F3

V

F4

V

F5

Reverse current

Diode Capacitance

Reverse Recovery Time

I

R

C

D

t

rr

Min.

30

0.24

0.32

0.40

0.50

1

2

10

5

Typ.

Max.

Unit

V

μA

pF

Conditions

IR=100μA

I

F

=0.1mA

I

F

=1mA

I

F

=10mA

I

F

=30mA

I

F

=100mA

V

R

=25V

V

R

=1V,f=1MHz

I

F

=I

R

=10mA

Irr=0.1XI

R

,R

L

=100Ω

nS

１　

JinYu

semiconductor

www.htsemi.com

Ｄ½½½：２０１１／０５

BAT54S Related Products

	BAT54S	BAT54A	BAT54C	BAT54
Description	0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 30 V, SILICON, SIGNAL DIODE
Number of terminals	3	3	3	3
Number of components	2	2	2	1
Processing package description	SOT-23, 3 PIN	Surface mount, 3 PIN	ROHS COMPLIANT, PLASTIC PACKAGE-3	ROHS COMPLIANT, PLASTIC PACKAGE-3
state	DISCONTINUED	DISCONTINUED	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
structure	系列 CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	single
Diode component materials	silicon	silicon	silicon	silicon
Maximum power consumption limit	0.2000 W	0.2500 W	0.2250 W	0.2250 W
Diode type	Signal diode	Signal diode	Signal diode	Signal diode
Maximum average forward current	0.2000 A	0.3000 A	0.2000 A	0.2000 A
Maximum repetitive peak reverse voltage	30 V	-	30 V	30 V

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