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BAT54T

Description
0.2 A, 30 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size292KB,2 Pages
ManufacturerHTSEMI( Jin Yu Semiconductor )
Websitehttp://www.htsemi.com
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BAT54T Overview

0.2 A, 30 V, 3 ELEMENT, SILICON, SIGNAL DIODE

BAT54T/AT/CT/ST
SWITCHING DIODE
FEATURES
Low Forward Voltage Drop
Fast Switching
SOT-523
Maximum Ratings @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
O
Pd
T
J
T
STG
Limits
30
200
150
125
-65-125
Unit
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)
I
R
Test
I
R
= 100μA
V
R
=25V
I
F
=0.1mA
I
F
=1mA
Forward
voltage
V
F
I
F
=10mA
I
F
=30mA
I
F
=100mA
Total
capacitance
C
T
t
rr
V
R
=1V,f=1MHz
I
F
=I
R
=10mA,
I
rr
=0.1xI
R
,R
L
=100Ω
conditions
MIN
30
2
240
320
400
500
1000
10
5
pF
nS
mV
MAX
UNIT
V
uA
Reverse recovery time
1 
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05

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