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BAT54TW_08

Description
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
File Size82KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAT54TW_08 Overview

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

BAT54TW /ADW /
CDW /SDW /BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Please click here to visit our online spice models database.
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
Mechanical Data
A
1
C
2
C
2
C
1
A
2
A
2
AC
1
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Orientation: See Diagrams Below
Marking Information: See Page 3
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
Top View
BAT54ADW*
BAT54CDW*
BAT54SDW*
BAT54BRW
BAT54TW
*Symmetrical configuration, no orientation indicator.
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
Value
30
200
300
600
Unit
V
mA
mA
mA
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Repetitive Peak Forward Current (Note 1)
Forward Surge Current (Note 1)
@ t < 1.0s
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-65 to +125
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 5)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
30
Typ
Max
240
320
400
500
1000
2.0
10
5.0
Unit
V
Test Condition
I
R
= 100μA
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 25V
V
R
= 1.0V, f = 1.0MHz
I
F
= 10mA through I
R
= 10mA
to I
R
= 1.0mA, R
L
= 100Ω
Forward Voltage (Note 5)
V
F
mV
Reverse Leakage Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes:
I
R
C
T
t
rr
μA
pF
ns
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
5. Short duration pulse test used to minimize self-heating effect.
BAT54TW /ADW /CDW /SDW /BRW
Document number: DS30152 Rev. 16 - 2
1 of 3
www.diodes.com
July 2008
© Diodes Incorporated

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