BAV100 ~ BAV103
FEATURES :
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 50 V, 100 V, 150 V and 200 V respectively
HIGH SPEED SWITCHING DIODES
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
• Repetitive peak reverse voltage:
max. 60 V, 120 V, 200 V and 250 V respectively
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
0.079 (2.00)Min.
• Repetitive peak forward current: max. 625 mA.
• Pb / RoHS Free
MECHANICAL DATA :
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05g
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
25
°
C ambient temperature unless otherwise specified.)
Symbol
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
V
RRM
Value
60
120
200
250
50
100
150
200
625
250
3.0
1.0
400
175
-65 to + 175
Unit
V
Maximum Continuous Reverse Voltage
Maximum Repetitive Peak Forward Current
Maximum Continuous Forward Current
Maximum Surge Forward Current
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
V
R
I
FRM
I
F
V
mA
mA
A
mW
°C
°C
at t = 100µs , Tj = 25°C
at t = 1s , Tj = 25°C
I
FSM
P
D
T
J
T
S
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Symbol
I
R
Test Condition
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
I
F
= 100 mA
I
F
= 200 mA
f = 1MHz ; V
R
= 0
I
F
= 30 mA to I
R
= 30mA
R
L
= 100
Ω
; measured
at I
R
= 3mA
Forward Voltage
Diode Capacitance
Reverse Recovery Time
V
F
Cd
Trr
Min.
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
Max.
100
100
100
100
1.0
1.25
5.0
50
Unit
nA
V
pF
ns
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BAV100 ~ BAV103 )
FIG. 1 MAXIMUM FORWARD CURRENT
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
400
1000
CONTINUOUS FORWARD
CURRENT, I
F
(mA)
300
Forward Current , I
F
(mA)
100
10
T
J
= 25
°
C
1
200
100
0.1
0
0
100
200
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature , Ta (°C)
Forward Voltage , V
F
(V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERSE CURRENT
VERSUS JUNCTION TEMPERATURE
1.5
10
3
1.4
Reverse Current , I
R
(
µ
A)
Diode Capacitance , Cd (pF)
10
2
V
R
= V
Rmax.
1.3
f = 1MHz;
1.2
1.1
T
J
= 25
°
C
10
1
1.0
10
-1
0.9
10
-2
0
10
20
0
100
200
0.8
Reverse Voltage , V
R
(V)
Junction Temperature, Tj (°C)
Page 2 of 2
Rev. 02 : March 25, 2005
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