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BAV103

Description
0.2 A, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size751KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BAV103 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-213AA

BAV103 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingtin lead
Terminal locationEND
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.4000 W
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum average forward current0.2000 A
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAV100
THRU
BAV103
Features
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
Maximum Ratings
Continuous Reverse
Voltage
BAV100
BAV101
BAV102
BAV103
Repetitive Peak Reverse
Voltage
BAV100
BAV101
BAV102
BAV103
Forward DC Current
Rectified Current (Average)
Half Wave Rectification
with Resist. Load
Repetitive Peak Forward
Current
Surge Forward Current
Power Dissipation
RoHS Compliant. See ordering information)
Moisture Sensitivity Level 1
Silicon Epitaxial Planar Diodes
These diodes are also available in other case styles including: the DO-35 case
with the type designations BAV19 to BAV21, the SOD-123 case with the type
designations BAV19W to BAV21W, the SOT-23 case with the type designations
BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to
BAV21WS.
Small Signal Diodes

MINIMELF(SOD-80C)
50V
100V
150V
200V
60V
120V
200V
250V
250mA
200mA
625mA
1.0A
400mW
T
A
=25
O
C
Cathode Mark
V
R
V
RRM
T
A
=25
O
C
C
I
F
I
(FAV)
I
FRM
I
FSM
P
TOT
T
A
=25
O
C
(1)
f>50Hz,
T
A
=25
O
C
f>50Hz, T
A
=25
O
C
(1)
T<1s, Tj =25
O
C
T
A
=25
O
C
DIM
A
B
C
INCHES
MIN
.130
.008
.055
MAX
.146
.016
.059
A
B
DIMENSION
MM
MIN
3.30
0.20
1.40
MAX
3.70
0.40
1.50
NOTE
Thermal Resistance
T
A
375
O
C/W
Junction to Ambient Air
(2)
Operating and Stora ge
-55 to +150
O
C
T
S
, T
STG
temperature Range
Note: (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
I
F
= 100mA
I
F
= 200mA
Maximum Leakage current
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
Typital Capacitance
Maximum Reverse recovery
time
Typical Dynamic Forward
Resistance
V
F
1.00V
1.25V
100nA
15uA
100nA
15uA
100nA
15uA
100nA
15uA
1.5pF
50ns
5.0 OHM
T
A
=25
O
C
SUGGESTED SOLDER
PAD LAYOUT
0.105
I
R
C
TOT
t
rr
R
F
V
R
=50V
V
R
=50V, Tj=100
O
C
V
R
=100V
V
R
=100V, Tj=100
O
C
V
R
=150V
V
R
=150V, Tj=100
O
C
V
R
=200V
V
R
=200V, Tj=100
O
C
V
R
=0V, f =1.0MHz
I
F
=30mA, I
R
=30mA
I
rr
=3.0mA,
R
L
=100 OHM
0.075”
0.030”
I
F
=10mA
Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Valid provided that electrodes are kept at ambient temperature
Revision: A
www.mccsemi.com
1 of 4
2011/01/01

BAV103 Related Products

BAV103 BAV103-TP
Description 0.2 A, SILICON, SIGNAL DIODE, DO-213AA 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
Number of terminals 2 2
Number of components 1 1
state DISCONTINUED DISCONTINUED
packaging shape round round
Package Size LONG FORM LONG FORM
surface mount Yes Yes
Terminal form WRAP AROUND WRAP AROUND
terminal coating tin lead tin lead
Terminal location END END
Packaging Materials Glass Glass
structure single single
Shell connection isolation isolation
Diode component materials silicon silicon
Maximum power consumption limit 0.4000 W 0.4000 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0500 us 0.0500 us
Maximum average forward current 0.2000 A 0.2000 A
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