WILLAS
BAV20
SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
°
C)
FEATURES
Dimensions (DO-35
)
Items
Symbol Ratings Unit
* Extremely Low VF
Reverse Voltag
VRRM
200
V
* Extremely thin package
Reverse Recovery
tr
50
ns
* Low stored charge
Time
1.02(26.0)
MIN.
* Majority carrier conduction
Power Dissipation
P
500
mW
3.33mW/
°
C (25
°
C)
Forward Current
IF
250
mA
Junction Temp.
Tj
-65 to 175
°
C
.153(3.6)
.132(3.0)
Storage Temp.
Tstg -65 to 175
°
C
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
SCS
BAV20
VOL
0.1AMP Schot
Pb Free Product
.012
.022(0.55)
.018(0.45)
SO
C
.112 (2.85)
.100 (2.55)
.076 (1.95)
.059 (1.5)
.067(1.7)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
* Terminal : Solder plated, solderable per MIL-STD-750,
MIN.
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.000159 ounce, 0.0045 gram
1.02(26.0)
Dimensions in millimeters
Electrical Characteristics (Ta=25
°
C)
Ratings
Symbol
Ratings
Unit
Breakdown Voltage
BV
V
IR=
100uA
200
Peak Forward Surge Current PW= 1sec.
IFsurge
1.0
A
Maximum Forward Voltage
VF
V
Rating 25
o
C ambient temperature unless otherwise specified.
IF=
100mA
1.0
Single phase half wave, 60Hz, resistive of inductive load.
Maximum Reverse Current
IR
uA
For capacitive load, derate current by 20%
VR=1 50V
0.10
VR=150V,Tj= 100
°
C
15
Conditions
Parameter
Maximum Junction Capacitance
Cj
pF
Repetitive Peak Reverse Voltage
VR= 0, f= 1 MHz
1.5
Continuous Reverse Voltage
Max Reverse Recovery Time
trr
ns
I
F
= 10mA DC
IF=IR=
30mA,
VR= 6V,
iR= 3mA,RL=
100
Ω
50
Forward Voltage
I
F
= 100mA DC
V
R
= 10V DC
Reverse Current
Mean Rectifying Current
Peak forward surge current
Capacitance between terminals
Operating Temperature
Storage Temperature
Marking C
MAXIMUM RATING AND ELECTRICAL CHARA
WILLAS ELECTRONIC CORP.
.004 (0.1)
max.
MECHANICAL DATA
.087(2.2)
.043 (1.1)
Symb
V
RM
V
R
V
F1
V
F2
I
R
I
O
I
FSM
C
T
T
J
T
STG
RITING AND CHARACTERISTIC CURVES (BAV20)
Characteristics
(T
j
= 25
_
C unless otherwise specified)
1000
I
F
– Forward Current ( mA )
I
R
– Reverse Current ( A )
100
Scattering Limit
10
1000
T
j
= 25°C
100
Scattering Limit
10
m
1
V
R
= V
RRM
0.1
0.01
0
40
80
120
1
0.1
160
200
0
0.4
0.8
1.2
1.6
2.0
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Reverse Current vs.
Junction Temperature
r
f
– Differential Forward Resistance ( )
Figure 2. Forward Current vs.
Forward Voltage
W
1000
100
T
j
= 25°C
10
1
0.1
1
10
100
I
F
– Forward Current ( mA )
Figure 3. Differential Forward Resistance vs.
Forward Current
WILLAS ELECTRONIC CORP.
Microchip MCU
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