NXP Semiconductors
Product data sheet
High-speed double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage: max. 50 V
•
Repetitive peak reverse voltage: max. 60 V
•
Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•
High-speed switching in thick and thin-film circuits.
DESCRIPTION
The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD package.
Top view
lumns
BAV74
PINNING
PIN
1
2
3
anode (a1)
anode (a2)
cathode
DESCRIPTION
2
1
2
3
3
MAM108
1
MARKING
TYPE NUMBER
BAV74
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse
voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
square wave; T
j
= 25
°C
prior to surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
2
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
−
−
−
−
−
60
50
215
125
450
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
MARKING CODE
(1)
JA*
Fig.1 Simplified outline (SOT23) and symbol.
NXP Semiconductors
Product data sheet
High-speed double diode
ORDERING INFORMATION
TYPE NUMBER
BAV74
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
BAV74
VERSION
SOT23
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
R
reverse current
see Fig.5
V
R
= 25 V
V
R
= 50 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 50 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
30
0.1
30
100
1.5
4
nA
µA
µA
µA
pF
ns
715
855
1.0
mV
mV
V
PARAMETER
CONDITIONS
MAX.
UNIT
V
fr
forward recovery voltage
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-tp)
R
th(j-a)
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2004 Jan 14
3
NXP Semiconductors
Product data sheet
High-speed double diode
GRAPHICAL DATA
BAV74
300
IF
(mA)
200
MBD033
handbook, halfpage
300
IF
MBG383
(mA)
(1)
(2)
(3)
200
single diode loaded
double diode loaded
100
100
0
0
100
T amb (
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4
Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 14
4
51mcu
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