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BC817K-40W

Description
NPN Silicon AF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size856KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BC817K-40W Overview

NPN Silicon AF Transistor

BC817K-40W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
Base Number Matches1
BC817.../BC818...
NPN Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types:
BC807.../W, BC808.../W (PNP)
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
Type
BC817-16
BC817K-16*
BC817-25
BC817K-25*
BC817-25W
BC817K-25W*
BC817-40
BC817K-40*
BC817-40W
BC817K-40W*
BC818-16W
BC818K-16W*
BC818-25
BC818K-25*
BC818-40
BC818K-40*
* Shrinked chip version
1
Pb-containing
Marking
6As
6As
6Bs
6Bs
6Bs
6Bs
6Cs
6Cs
6Cs
6Cs
6Es
6Es
6Fs
6Fs
6Gs
6Gs
Pin Configuration
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
1=B 2=E 3=C -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
SOT23
SOT23
SOT323
SOT323
SOT23
SOT23
SOT323
SOT323
SOT323
SOT323
SOT23
SOT23
SOT23
SOT23
package may be available upon special request
1
2008-04-11

BC817K-40W Related Products

BC817K-40W BC817K-40 BC818K-16W BC818K-25 BC818K-40
Description NPN Silicon AF Transistor NPN Silicon AF Transistor NPN Silicon AF Transistor NPN Silicon AF Transistor NPN Silicon AF Transistor
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N N
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 45 V 45 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 250 250 100 40 250
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.5 W 0.25 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 170 MHz 170 MHz 170 MHz 170 MHz 170 MHz
Base Number Matches 1 1 1 1 1
Is it lead-free? Lead free Lead free Lead free - Lead free
Humidity sensitivity level 1 1 1 - 1
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