EEWORLDEEWORLDEEWORLD

Part Number

Search

BC817W

Description
EPITAXIAL PLANAR NPN TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size34KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

BC817W Overview

EPITAXIAL PLANAR NPN TRANSISTOR

BC817W Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC807W.
A
J
M
E
B
BC817W
EPITAXIAL PLANAR NPN TRANSISTOR
M
D
3
2
1
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
50
45
5
500
-500
100
150
-55 150
UNIT
L
V
V
V
mA
mA
mW
H
N
K
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
0.42
0.10 MIN
C
1. EMITTER
2. BASE
3. COLLECTOR
USM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=500mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
100
40
-
-
100
-
TYP.
-
-
-
-
-
-
-
5
MAX.
0.1
0.1
630
-
0.7
1.2
-
-
V
V
MHz
pF
UNIT
A
A
16:100 250 , 25:160 400 , 40:250 630
Marking
MARK SPEC
TYPE
MARK
BC817W-16
2M
BC817W-25
2N
BC817W-40
2R
Type Name
Lot No.
2008. 9. 2
Revision No : 0
1/2

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2225  2752  130  1768  2795  45  56  3  36  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号