BC881
TRANSISTOR (NPN)
BC818-16
BC818-25
BC818-40
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
5
0.5
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE
(sat)
V
BE
(sat)
V
BE
C
ob
f
T
Test
conditions
MIN
30
25
5
0.1
0.1
100
60
0.7
1.2
1.2
6
170
V
V
V
pF
MHz
630
MAX
UNIT
V
V
V
μA
μA
I
C
= 10μA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 10μA, I
C
=0
V
CB
= 25 V , I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 300mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
=1V, I
C
= 500mA
V
CB
=10V ,f=1MHz
V
CE
= 5 V,
f=100MHz
I
C
= 50mA
CLASSIFICATION OF
Rank
Range
Marking
h
FE
(1)
BC818-16
100-250
6E
BC818-25
160-400
6F
BC818-40
250-630
6G
１
JinYu
semiconductor
www.htsemi.com
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